MIO1200-33E10 IXYS, MIO1200-33E10 Datasheet - Page 5

• Manufacturer Part Number: MIO1200-33E10
• Description: MOD IGBT SGL SWITCH 3300V E10
• Manufacturer: IXYS

Specifications of MIO1200-33E10

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 3300V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 1200A
• Current - Collector (ic) (max): 1200A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 187nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E10
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 3300
• Ic25, Tc = 25°c, Igbt, (a): 1650
• Ic80, Tc = 80°c, Igbt, (a): 1200
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 3.1
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 1950
• Rthjc, Max, Igbt, (k/w): 0.0085
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 1200
• Rthjc, Max, Diode, (k/w): 0.017
• Package Style: E10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Fig. 13 Typical reverse recovery characteristics
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Fig. 15 Thermal impedance vs time
0.0001
0.001
2000
1800
1600
1400
1200
1000
0.01
800
600
400
200
0.1
0
vs forward current
0.001
0
500
0.01
1000
Z
th(j-c)
Diode
t [s]
0.1
1500
I
F
[A]
2000
Z
1
th(j-c)
V
R
V
T
L
σ
CC
GE
vj
G
= 100 nH
= 125 °C
= 1.5 ohm
= 1800 V
= ±15 V
IGBT
2500
E
I
Q
RM
rec
RR
10
3000
Fig. 14 Typical reverse recovery characteristics
Ri(K/kW)
Ri(K/kW)
1800
1600
1400
1200
1000
800
600
400
200
τ
τ
vs gate resistor
i
i
0
(ms)
(ms)
0
i
Z
5.50
11.2
193
189
5
th
1
JC
(t)
R
G
=
10
[ohm]
1.53
31.2
3.73
24.5
∑
i
2
=
n
MIO 1200-33E10
1
R
i
(1
V
I
V
T
L
C
0.621
σ
CC
GE
vj
15
1.30
2.69
= 1200 A
e -
= 100 nH
= 125 °C
8.0
I
= 1800 V
= ±15 V
Q
E
RM
3
rec
RR
t/ -
τ
i
)
0.646
20
1.48
0.42
2.36
4
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