MIO1200-33E10 IXYS, MIO1200-33E10 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
MIO1200-33E10
Manufacturer Part Number
MIO1200-33E10
Description
MOD IGBT SGL SWITCH 3300V E10
Manufacturer
IXYS
Datasheet
1.MIO1200-33E10.pdf
(6 pages)
Specifications of MIO1200-33E10
Igbt Type
NPT
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (max)
3300V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 1200A
Current - Collector (ic) (max)
1200A
Current - Collector Cutoff (max)
120mA
Input Capacitance (cies) @ Vce
187nF @ 25V
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E10
Channel Type
N
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
3300
Ic25, Tc = 25°c, Igbt, (a)
1650
Ic80, Tc = 80°c, Igbt, (a)
1200
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
3.1
Eoff, Typ, Tj = 125°c, Igbt, (mj)
1950
Rthjc, Max, Igbt, (k/w)
0.0085
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
1200
Rthjc, Max, Diode, (k/w)
0.017
Package Style
E10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MIO1200-33E10
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
MIO1200-33E10
Quantity:
60
Fig. 13 Typical reverse recovery characteristics
© 2011 IXYS All rights reserved
Fig. 15 Thermal impedance vs time
0.0001
0.001
2000
1800
1600
1400
1200
1000
0.01
800
600
400
200
0.1
0
vs forward current
0.001
0
500
0.01
1000
Z
th(j-c)
Diode
t [s]
0.1
1500
I
F
[A]
2000
Z
1
th(j-c)
V
R
V
T
L
σ
CC
GE
vj
G
= 100 nH
= 125 °C
= 1.5 ohm
= 1800 V
= ±15 V
IGBT
2500
E
I
Q
RM
rec
RR
10
3000
Fig. 14 Typical reverse recovery characteristics
Ri(K/kW)
Ri(K/kW)
1800
1600
1400
1200
1000
800
600
400
200
τ
τ
vs gate resistor
i
i
0
(ms)
(ms)
0
i
Z
5.50
11.2
193
189
5
th
1
JC
(t)
R
G
=
10
[ohm]
1.53
31.2
3.73
24.5
∑
i
2
=
n
MIO 1200-33E10
1
R
i
(1
V
I
V
T
L
C
0.621
σ
CC
GE
vj
15
1.30
2.69
= 1200 A
e -
= 100 nH
= 125 °C
8.0
I
= 1800 V
= ±15 V
Q
E
RM
3
rec
RR
t/ -
τ
i
)
0.646
20
1.48
0.42
2.36
4
20110119a
5 - 6