IXEN60N120 IXYS, IXEN60N120 Datasheet
IXEN60N120
Specifications of IXEN60N120
Related parts for IXEN60N120
IXEN60N120 Summary of contents
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... off MHz ies 600 Gon thJC © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXEN 60N120 IXEN 60N120D1 Maximum Ratings 1200 ± 20 100 65 = 125°C 100 VJ V CES = 22 Ω 125° ...
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... ISOL ISOL M mounting torque D teminal connection torque Symbol Conditions R with heatsink compound thCH Weight © 2003 IXYS All rights reserved Maximum Ratings Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 2.3 = 125°C 1.7 = 600 200 Maximum Ratings -40 ...
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... IXEN 60N120D1 125° Fig. 2 Typ. output characteristics T = 125° 25° Fig. 4 Typ. forward characteristics of free wheeling diode 125° 600 200 400 600 800 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 300 ns 240 t rr 180 120 60 IXEN60N120 0 1000 A/µ ...
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... Fig.10 Typ. turn off energy and switching times versus gate resistor 1 diode 0.1 single pulse 0.00001 0.0001 0.001 0.01 0.1 t Fig. 12 Typ. transient thermal impedance 800 ns t d(off) 600 t 400 200 100 1200 ns t d(off) 1000 t 800 600 400 200 Ω 100 120 IGBT IXEN60N120 ...