MUBW50-12E8 IXYS, MUBW50-12E8 Datasheet - Page 5

• Manufacturer Part Number: MUBW50-12E8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-12E8

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 3.8nF @ 25V
• Power - Max: 350W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 90A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 140
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 0.94
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 90
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 62
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.35
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 35
• Rthjc, Typ, Br Chopper, (k/w): 0.55
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Fig. 1 Forward current versus voltage
Fig. 4
Fig. 6 Transient thermal impedance junction to case
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Z
Input Rectifier Bridge D11 - D16
P
0.001
I
F
thJC
0.01
tot
120
100
450
400
350
300
250
200
150
100
K/W
0.1
W
80
60
40
20
A
50
0.001
0
0
1
0.0
0
drop per diode
Power dissipation versus direct output current and ambient temperature, sin 180°
20 40 60 80 100 120 140 160 180
0.5
T
T
VJ
VJ
1.0
= 125°C
= 25°C
1.5
V
F
0.01
2.0
I
d(AV)M
V
2.5
A
I
Fig. 2 Surge overload current
FSM
500
400
300
200
100
0
A
0.001
0
20
50Hz, 80% V
T
40
VJ
T
0.1
VJ
= 150°C
= 45°C
0.01
60
RRM
80 100 120 140
T
amb
0.1
t
0.05 K/W
0.15 K/W
t
R
0.3 K/W
0.5 K/W
thA
s
1 K/W
2 K/W
5 K/W
s
:
C
1
1
I
Fig. 3 I
Fig. 5 Max. forward current versus
d(AV)
I
2
t
160
140
120
100
10
A
10
10
80
60
40
20
A
2
0
s
4
3
2
1
0
T
case temperature
2
VJ
t versus time per diode
20 40 60 80 100 120 140
= 45°C
MUBW 50-12 E8
T
VJ
= 150°C
2
3
4 5 6 7 8 9
T
C
t
20070912a
ms
5 - 8
C
10