MUBW50-12E8 IXYS, MUBW50-12E8 Datasheet - Page 6

• Manufacturer Part Number: MUBW50-12E8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-12E8

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 3.8nF @ 25V
• Power - Max: 350W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 90A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 140
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 0.94
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 90
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 62
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.35
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 35
• Rthjc, Typ, Br Chopper, (k/w): 0.55
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2007 IXYS All rights reserved
Output Inverter T1 - T6 / D1 - D6
I
V
I
C
C
GE
120
100
160
120
A
80
60
40
20
20
15
10
A
80
40
V
Fig. 7 Typ. output characteristics
Fig. 9 Typ. transfer characteristics
Fig. 11 Typ. turn on gate charge
0
5
0
0
0
0
4
T
VJ
V
CE
= 125°C
100
= 20 V
6
1
V
200
GE
8
= 17 V
2
T
VJ
= 25°C
300
10
15 V
V
V
CE
GE
V
I
C
Q
3
CE
13 V
G
400
T
= 600 V
12
= 50 A
VJ
= 25°C
V
nC
11 V
V
9 V
500
4
14
I
C
I
RM
I
F
120
100
160
120
100
A
80
60
40
20
Fig. 12 Typ. turn off characteristics of
80
40
A
Fig. 8 Typ. output characteristics
Fig. 10 Typ. forward characteristics of
80
60
40
20
0
A
0
0
0
0
0
t
rr
I
RM
free wheeling diode
free wheeling diode
200
1
1
400
T
VJ
= 125°C
2
MUBW 50-12 E8
V
GE
600
= 17 V
V
T
VJ
V
-di/dt
2
F
CE
T
= 125°C
T
V
I
VJ
F
VJ
3
R
= 25°C
= 60 A
= 125°C
= 600 V
800
15 V 13 V
A/μs
V
MUBW5012E8
11 V
V
9 V
1000
4
3
20070912a
300
240
180
120
60
0
ns
6 - 8
t
rr