IXFN140N20P IXYS, IXFN140N20P Datasheet - Page 2
![MOSFET N-CH 200V 115A SOT227B](/photos/14/30/143030/ixfn140n20p_sml.jpg)
IXFN140N20P
Manufacturer Part Number
IXFN140N20P
Description
MOSFET N-CH 200V 115A SOT227B
Manufacturer
IXYS
Series
PolarHT™r
Datasheet
1.IXFN140N20P.pdf
(5 pages)
Specifications of IXFN140N20P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
115A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
680W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
115 A
Power Dissipation
680 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
115
Rds(on), Max, Tj=25°c, (?)
0.018
Ciss, Typ, (pf)
7500
Qg, Typ, (nc)
240
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
680
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN140N20P
Manufacturer:
ERICSSON
Quantity:
1 000
Part Number:
IXFN140N20P
Quantity:
132
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
one or moreof the following U.S. patents:
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I
-di/dt = 100 A/μs
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25 A
= 100 V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
= 70 A
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 70 A
= 70 A
(T
(T
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
50
Characteristic Values
Characteristic Values
7500
1630
Typ.
Typ.
0.05
280
150
240
110
0.6
84
30
35
90
50
6,162,665
6,259,123 B1
6,306,728 B1
6
Max.
Max.
0.22 K/W
140
280
200 ns
1.5
K/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
SOT-227B miniBLOC
6,683,344
6,710,405B2
6,710,463
IXFN 140N20P
6,727,585
6,759,692
6,771,478 B2