IXFN180N10 IXYS, IXFN180N10 Datasheet

MOSFET N-CH 100V 180A SOT-227B

IXFN180N10

Manufacturer Part Number
IXFN180N10
Description
MOSFET N-CH 100V 180A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN180N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
9100pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
180 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
180
Rds(on), Max, Tj=25°c, (?)
0.008
Ciss, Typ, (pf)
9100
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
595
Rthjc, Max, (ºc/w)
0.21
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN180N10
Manufacturer:
IXYS
Quantity:
240
Part Number:
IXFN180N10
Manufacturer:
ST
0
Part Number:
IXFN180N10
Quantity:
128
HiPerFET
Power MOSFET
Single MOSFET Die
Preliminary data sheet
© 1999 IXYS All rights reserved
Symbol Test Conditions
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
V
V
I
I
R
D25
L(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
ISOL
DSS
DSS
GS(th)
DS(on)
d
J
= 25 C, unless otherwise specified)
T
T
T
T
Continuous
Transient
Terminal (current limit)
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
Note 2
S
ISOL
C
C
C
C
J
J
C
J
C
GS
GS
DS
GS
DS
GS
= 25 C
= 25 C
= V
= 25°C to 150°C
= 25°C to 150°C, R
= 25 C;
= 25 C
= 25 C
= 25 C
= 0 V, I
= 20V, V
= 0 V
= V
= 10V, I
Test Conditions
I
150 C, R
DM
1 mA
DSS
GS
, di/dt 100 A/ s, V
, I
D
D
D
= 3mA
= 8mA
= 0.5 • I
GS
TM
Note 1
G
= 0V
= 2
t = 1 min
t = 1 s
D25
GS
= 1M
DD
V
DSS
T
T
J
J
= 25 C
= 125 C
Min.
100
IXFN 180N10
2
Characteristic Values
Typ.
-55 ... +150
-55 ... +150
Maximum Ratings
150
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
100
100
30
180
100
720
180
300
600
20
30
60
Max.
100
100
3
5
2
8
4
V/ns
mJ
m
V~
V~
mA
W
nA
C
C
C
C
A
A
A
V
V
V
V
A
J
g
V
V
A
V
I
R
t
miniBLOC, SOT-227 B (IXFN)
Features
Applications
Advantages
G = Gate
S = Source
D25
rr
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
DSS
DS(on)
E153432
250 ns
DS (on)
= 100
= 180
=
HDMOS
D = Drain
8 m
TM
G
process
98546B (8/99)
A
V
S
D
S

Related parts for IXFN180N10

IXFN180N10 Summary of contents

Page 1

... 20V GSS DSS DS DSS 10V 0.5 • I DS(on D25 Note 2 © 1999 IXYS All rights reserved IXFN 180N10 Maximum Ratings 100 100 20 30 180 100 720 180 DSS 600 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values Min ...

Page 2

... F GS Pulse test, t 300 s, duty cycle -di/dt = 100 Notes: 1. Pulse width limited Pulse test, t 300 ms, duty cycle d IXYS reserves the right to change limits, test conditions, and dimensions. Characteristic Values Min. Typ. Max 9100 3200 1600 0.5 • DSS D D25 140 65 360 , I = 0.5 • ...

Page 3

... 1.0 0 100 I - Amperes D Figure 5. Drain Current vs. Case Temperature 125 100 Terminal Current Limit -50 - Degrees C C © 1999 IXYS All rights reserved Figure 2. Output Characteristics at 125 O C 200 7V 150 6V 100 1.5 2.0 Figure vs 2 1.8 1.6 1.4 O 1.2 C 1.0 0.8 150 ...

Page 4

... V - Volts SD Figure 11. Transient Thermal Resistance 0.40 0.20 0.10 0.08 0.06 0.04 0.02 0. IXYS reserves the right to change limits, test conditions, and dimensions. 10000 1000 Figure 10. Forward Bias Safe Operating Area 200 100 10 1 1.4 1 Pulse Width - Seconds IXFN 180N10 Figure 8. Capacitance Curves ...

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