IXFN280N085 IXYS, IXFN280N085 Datasheet

MOSFET N-CH 85V 280A SOT-227B

IXFN280N085

Manufacturer Part Number
IXFN280N085
Description
MOSFET N-CH 85V 280A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN280N085

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.4 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
280A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
580nC @ 10V
Input Capacitance (ciss) @ Vds
19000pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0044 Ohms
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
280 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
280
Rds(on), Max, Tj=25°c, (?)
0.0044
Ciss, Typ, (pf)
19000
Qg, Typ, (nc)
580
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
700
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN280N085
Manufacturer:
FSC
Quantity:
10 000
Part Number:
IXFN280N085
Quantity:
135
HiPerFET
MOSFETs Single Die
MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
V
M
Weight
Symbol
BV
V
I
I
R
D25
L(RMS)
DM
A
GSS
DSS
© 2008 IXYS Corporation, All rights reserved
J
JM
stg
DSS
DGR
GSS
GSM
AS
d
ISOL
GS(th)
DS(on)
d
DSS
Test Conditions
T
T
Continuous
Transient
T
External Lead Current Limit
T
T
T
I
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
Power
, V
GS
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 8mA
= 100A, Note 1
DS
DSS
= 0V
t = 1min
t = 1s
, T
J
GS
≤ 150°C
= 1MΩ
T
J
= 125°C
rr
(T
JM
J
= 25°C, unless otherwise specified)
IXFN280N085
Min.
Characteristic Values
2.0
85
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
1120
2500
3000
Typ.
±20
±30
280
200
200
700
150
85
85
30
4
5
±200
Max.
100
4.0
4.4
Nm/lb.in.
Nm/lb.in.
2
V/ns
mA
V~
V~
μA
nA
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
V
V
J
V
I
R
Features
Advantages
Applications
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
miniBLOC, SOT-227 B
D25
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Avalanche rated
Guaranteed FBSOA
Low package inductance
Fast intrinsic Rectifier
Easy to mount
Space savings
High power density
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
DS(on)
DSS
E153432
DS(on)
= 85V
= 280A
≤ ≤ ≤ ≤ ≤ 4.4mΩ Ω Ω Ω Ω
HDMOS
G
D = Drain
TM
S
process
DS98747B(12/08)
D
S

Related parts for IXFN280N085

IXFN280N085 Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS 10V 100A, Note 1 DS(on © 2008 IXYS Corporation, All rights reserved IXFN280N085 rr Maximum Ratings 85 = 1MΩ ±20 ±30 280 200 1120 JM 200 4 ≤ 150°C 5 700 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...

Page 2

... I = 100A 77 DSS D 280 0.05 Characteristic Values Min. Typ 50V 0.76 R 8.00 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN280N085 miniBLOC, SOT-227 B Max screws (4x) supplied nC Dim. Millimeter nC Min. A 31.50 31. 7.80 C 4.09 0.18 °C/W D 4.09 E 4.09 ° ...

Page 3

... IXYS Corporation, All rights reserved 300 250 200 150 100 2.0 2.5 3.0 = 140A Value 280A 140A D 75 100 125 150 75 100 125 150 IXFN280N085 Fig. 2. Output Characteristics @ 125º 10V 0.0 0.5 1.0 1 Volts DS Fig Normalized to I DS(on) vs. Drain Current 1 10V GS 1 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions 125ºC J 25ºC - 40ºC 4.5 5.0 5.5 6.0 C iss C oss C rss Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXFN280N085 Fig. 8. Transconductance 140 T 120 100 100 I - Amperes D Fig. 10. Gate Charge ...

Page 5

... IXYS Corporation, All rights reserved Fig. 13. Forward-Bias Safe Operating Area 10,000 R Limit DS(on) 1,000 100µs 1ms 100 External-Lead Limit 10ms 100ms 150º 75ºC C Single Pulse 1 100 1 V IXFN280N085 @ T = 75ºC C 25µs 100µs 1ms 10ms 100ms DC 10 100 - Volts DS IXYS REF: F_280N085(9Y-N17)12-02-08-A ...

Related keywords