IXTN170P10P IXYS, IXTN170P10P Datasheet

IXTN170P10P

Manufacturer Part Number

IXTN170P10P

Description

MOSFET P-CH 100V 170A SOT227

Manufacturer

IXYS

Series

PolarP™r

Datasheet

1.IXTN170P10P.pdf (5 pages)

Specifications of IXTN170P10P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

12 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

170A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

240nC @ 10V

Input Capacitance (ciss) @ Vds

12600pF @ 25V

Power - Max

890W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Vdss, Max, (v)

-100

Id(cont), Tc=25°c, (a)

-170

Rds(on), Max, Tj=25°c, (?)

0.012

Ciss, Typ, (pf)

12600

Qg, Typ, (nc)

240

Trr, Typ, (ns)

176

Pd, (w)

890

Rthjc, Max, (k/w)

0.14

Package Style

SOT-227

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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PolarP

Power MOSFE

P-Channel Enhancement Mode

Avalanche Rated

Symbol

dV/dt

Weight

Symbol

D25

GSS

DSS

stg

SOLD

DSS

DGR

GSS

GSM

ISOL

GS(th)

DS(on)

DSS

= 25°C, Unless Otherwise Specified)

Test Conditions

Continuous

Transient

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

50/60 Hz, RMS

Mounting Torque

Terminal Connection Torque

Test Conditions

ISOL

= 25°C to 150°C

= 25°C to 150°C, R

= 25°C

= 25°C, Pulse Width Limited by T

= 25°C

≤ I

= 25°C

≤ 1mA

= 0V, I

= V

= ±20V, V

= V

= -10V, I

, V

DSS,

, I

= - 250µA

≤ V

= -1mA

= 0.5 • I

= 0V

DSS

= 0V

, T

t = 1 minute

t = 1 second

D25

≤ 150°C

, Note 1

= 1MΩ

= 125°C

IXTN170P10P

-100

- 2.0

Min.

-55 ... +150

Characteristic Values

Maximum Ratings

1.3/11.5

1.5/13

- 510

2500

3000

-100

-170

±20

±30

890

150

300

260

3.5

Typ.

±100

- 250 µA

- 4.0

Nm/lb.in.

Max.

- 50 µA

12 mΩ

V/ns

°C

miniBLOC, SOT-227

G = Gate

S = Source

Either Source Terminal at miniBLOC

can be used as Main or Kelvin Source.

Features

Advantages

Applications

D25

International Standard Package

Rugged PolarP

High Current Handling Capability

Fast Intrinsic Diode

Avalanche Rated

Low Package Inductance

Easy to Mount

Space Savings

High Power Density

High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

DS(on)

DSS

E153432

≤ ≤ ≤ ≤ ≤

D = Drain

-100V

-170A

12mΩ Ω Ω Ω Ω

Process

DS99975A(03/09)

Related parts for IXTN170P10P

IXTN170P10P Summary of contents

Page 1

... ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTN170P10P Maximum Ratings -100 = 1MΩ -100 GS ±20 ±30 -170 - 510 JM -170 3.5 ≤ 150° 890 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... I = 0.5 • DSS D D25 120 0.05 Characteristic Values Min. Typ. JM 176 1.25 -14.2 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN170P10P Max. SOT-227B (IXTN) Outline (M4 screws (4x) supplied 0.14 °C/W °C/W Max. -170 A - 680 µC A ...

Page 3

... D -180 -160 T = 125ºC J -140 -120 -100 -80 -60 - 25ºC J -20 -160 -200 -240 -280 IXTN170P10P Fig. 2. Extended Output Characteristics @ 25º -15V -10V - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V -170A D -50 ...

Page 4

... T = 25º -3.0 -3.5 -4.0 -4 1,000 C iss - 100 C oss - 10 C rss - -25 -30 -35 -40 IXTN170P10P Fig. 8. Transconductance -20 -40 -60 -80 -100 I - Amperes D Fig. 10. Gate Charge 50V 85A -1mA 100 120 140 160 180 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100µs 1ms R Limit ...

Page 5

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