IXTN170P10P IXYS, IXTN170P10P Datasheet - Page 4
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IXTN170P10P
Manufacturer Part Number
IXTN170P10P
Description
MOSFET P-CH 100V 170A SOT227
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTN170P10P.pdf
(5 pages)
Specifications of IXTN170P10P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
12600pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-170
Rds(on), Max, Tj=25°c, (?)
0.012
Ciss, Typ, (pf)
12600
Qg, Typ, (nc)
240
Trr, Typ, (ns)
176
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
-160
-140
-120
-100
-300
-270
-240
-210
-180
-150
-120
1,000
-80
-60
-40
-20
-90
-60
-30
100
0
0
-3.0
-0.5
0
f
-3.5
-1.0
= 1 MHz
-5
Fig. 9. Forward Voltage Drop of
-4.0
-1.5
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
-4.5
-2.0
J
Intrinsic Diode
-15
= 125ºC
V
V
V
GS
SD
DS
-5.0
-2.5
- Volts
-20
- Volts
- Volts
-5.5
-3.0
-25
T
T
J
J
= - 40ºC
= 25ºC
C iss
C oss
-6.0
-3.5
C rss
-30
125ºC
25ºC
-6.5
-4.0
-35
-7.0
-4.5
-40
-
1,000
-
100
-
100
-10
10
-
90
80
70
60
50
40
30
20
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
1
0
0
-
1
0
0
R
DS(on)
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
20
J
C
V
I
I
D
G
= 150ºC
DS
= 25ºC
-20
= - 85A
= -1mA
Limit
= - 50V
40
Fig. 8. Transconductance
-40
60
Fig. 10. Gate Charge
80
Q
-60
10ms
G
100
- NanoCoulombs
I
D
V
- Amperes
DS
-
120 140 160 180
-80
10
- Volts
IXTN170P10P
1ms
DC, 100ms
-100
100µs
-120
IXYS REF: T_170P10P(B9) 3-25-09-C
125ºC
T
200 220 240
J
25µs
= - 40ºC
25ºC
-140
-160
-
100