IXFN340N07 IXYS, IXFN340N07 Datasheet

MOSFET N-CH 70V 340A SOT-227B

IXFN340N07

Manufacturer Part Number
IXFN340N07
Description
MOSFET N-CH 70V 340A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN340N07

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
70V
Current - Continuous Drain (id) @ 25° C
340A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
490nC @ 10V
Input Capacitance (ciss) @ Vds
12200pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohms
Drain-source Breakdown Voltage
70 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
340 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
70
Id(cont), Tc=25°c, (a)
340
Rds(on), Max, Tj=25°c, (?)
0.004
Ciss, Typ, (pf)
12200
Qg, Typ, (nc)
490
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
694
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN340N07
Manufacturer:
PANASONIC
Quantity:
9 000
Part Number:
IXFN340N07
Quantity:
134
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
© 2004 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
L(RMS)
DM
GSS
D25
AR
DSS
JM
stg
GSM
AR
J
GH(th)
DSS
DGR
GS
AS
D
ISOL
DSS
DS(on)
d
T
T
I
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 μs,
duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
Terminal current limit
T
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
S
ISOL
C
C
J
C
C
C
C
GS
DS
GS
DS
GS
J
J
GS
≤ I
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
≤ 150°C, R
= 25°C
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
, di/dt ≤ 100 A/μs, V
DSS
, I
D
D
DC
= 3 mA
= 8 mA
D
, V
G
= 100A
= 2 Ω
DS
t = 1 min
t = 1 s
= 0
GS
= 1 MΩ
DD
T
T
(T
J
J
≤ V
rr
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
JM
,
IXFN 340N07
min.
2.0
70
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
1360
2500
3000
S
G
340
100
±20
±30
200
700
150
70
70
64
10
30
4
max.
±200
100
4.0
2
4
D
S
V/ns
mJ
mA
nA
μA
°C
°C
°C
V~
V~
W
V
V
A
A
V
V
V
V
A
A
g
J
Features
Applications
Advantages
V
I
R
t
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
miniBLOC, SOT-227 B (IXFN)
D25
rr
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Linear current regulators
Easy to mount
Space savings
High power density
DSS
DS(on)
E153432
DS (on)
≤ ≤ ≤ ≤ ≤ 200 ns
=
= 340
=
HDMOS
G
70
D = Drain
S
4 mΩ Ω Ω Ω Ω
TM
DS98547D(05/04)
D
process
V
A
S

Related parts for IXFN340N07

IXFN340N07 Summary of contents

Page 1

... ± GSS DSS DS DSS 100A DS(on Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFN 340N07 Maximum Ratings MΩ ±20 ±30 340 100 1360 JM 200 64 4 ≤ DSS 700 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 Nm/lb.in. ...

Page 2

... Pulse test, t ≤ 300 μs, duty cycle d ≤ 50A, -di/dt = 100 A/μ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 Characteristic Values (T = 25°C, unless otherwise specified) J min. ...

Page 3

... T =125 C J 1.5 1.4 1.3 1.2 1.1 ° 100 150 I - Amperes D © 2004 IXYS All rights reserved 6V 5V 0.9 1.2 1.5 =100A D 75 100 125 150 L(RMS) D 200 250 IXFN 340N07 Fig. 2. Output Characteristics @ 125 Deg. C 240 V =10V GS 200 ...

Page 4

... C J -80 -40 0 -0.4 -0.5 -0.6 -0 Volts SD Fig. 11. Capacitance 100000 f=100kHz 10000 1000 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 5 5.5 6 ° -0.8 -0.9 -1 Ciss Coss Crss 0.001 30 40 IXFN 340N07 Fig. 8. Transconductance 180 150 ° T =25 ...

Page 5

... IXYS All rights reserved Fig. 13. Forward-Bias Safe Operating Area R Limit (on) DS 1,000 100 10ms Volts D S IXFN 340N07 T = 25º 150ºC J 100µs 1ms 100 ...

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