IXFN360N15T2 IXYS, IXFN360N15T2 Datasheet - Page 6
![MOSFET N-CH 150V 310A SOT227](/photos/14/30/143039/ixfn360n15t2_sml.jpg)
IXFN360N15T2
Manufacturer Part Number
IXFN360N15T2
Description
MOSFET N-CH 150V 310A SOT227
Manufacturer
IXYS
Series
GigaMOS™r
Type
GigaMOS Trench T2 HiperFetr
Datasheet
1.IXFN360N15T2.pdf
(6 pages)
Specifications of IXFN360N15T2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
310A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
715nC @ 10V
Input Capacitance (ciss) @ Vds
47500pF @ 25V
Power - Max
1070W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Product
MOSFET Gate Drivers
Rise Time
170 ns
Fall Time
265 ns
Supply Current
100 A
Maximum Power Dissipation
1070 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
115 ns
Maximum Turn-on Delay Time
50 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
310 A
Output Voltage
150 V
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
310
Rds(on), Max, Tj=25°c, (?)
0.004
Ciss, Typ, (pf)
47500
Qg, Typ, (nc)
715
Pd, (w)
1070
Rthjc, Max, (k/w)
0.14
Package Style
SOT227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN360N15T2
Manufacturer:
CUI
Quantity:
23 000
IXFN360N15T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximium Transient Thermal Impedance
.sadgsfgsf
0.200
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_360N15T2 (9V)08-19-09