IXTN60N50L2 IXYS, IXTN60N50L2 Datasheet - Page 2

• Manufacturer Part Number: IXTN60N50L2
• Description: MOSFET N-CH 53A 500V SOT-227
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTN60N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 610nC @ 10V
• Input Capacitance (ciss) @ Vds: 24000pF @ 25V
• Power - Max: 735W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 53
• Rds(on), Max, Tj=25°c, (?): 0.10
• Ciss, Typ, (pf): 24000
• Qg, Typ, (nc): 610
• Trr, Typ, (ns): 980
• Pd, (w): 735
• Rthjc, Max, (k/w): 0.17
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe Operating Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
V
Repetitive, pulse width limited by T
I
I
Test Conditions
Test Conditions
F
F
V
DS
GS
GS
GS
DS
GS
G
= I
= 60A, -di/dt = 100A/μs
R
PRELIMINARY TECHNICAL INFORMATION
= 100V, V
= 10V, I
= 0V, V
= 15V, V
= 0.5Ω (External)
= 10V, V
= 400V, I
= 0V
S
, V
GS
= 0V, Note 1
DS
D
DS
DS
D
GS
= 30A, Note 1
= 25V, f = 1MHz
= 0.9A, T
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
C
DSS
DSS
4,931,844
5,017,508
5,034,796
= 75°C, tp = 3s
, I
, I
D
D
= 30A
= 30A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
18
360
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
1325
0.05
Typ.
172
165
610
130
365
Typ.
Typ.
35.8
25
24
40
40
38
980
73
0.17 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
240
Max.
32
1.5
60
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
W
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXTN) Outline
6,727,585
6,771,478 B2 7,071,537
(M4 screws (4x) supplied)
IXTN60N50L2
7,005,734 B2
7,063,975 B2
7,157,338B2