IXFN140N30P IXYS, IXFN140N30P Datasheet

MOSFET N-CH 300V 110A SOT-227B

IXFN140N30P

Manufacturer Part Number
IXFN140N30P
Description
MOSFET N-CH 300V 110A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN140N30P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
14800pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
115 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.024
Ciss, Typ, (pf)
14800
Qg, Typ, (nc)
185
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
700
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN140N30P
Manufacturer:
OMRON
Quantity:
1 500
Part Number:
IXFN140N30P
Quantity:
127
Polar
HiPerFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
V
M
Weight
GSS
DSS
D25
LRMS
DM
A
J
JM
stg
L
GS(th)
DSS
DGR
GSS
GSM
AS
D
ISOL
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
V
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
S
ISOL
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
D
DD
D
D
= 3mA
= 8mA
= 70A, Note 1
≤ V
DS
= 0V
DSS
, T
J
GS
≤ 150°C
= 1MΩ
T
J
= 125°C
t = 1s
t = 1min
JM
IXFN140N30P
300
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
Typ.
1.5/13
20
2500
3000
± 30
300
300
±20
110
100
300
700
150
300
70
20
30
5
Max.
±200
5.0
25
24
Nm/lb.in.
Nm/lb.in.
1
V/ns
mA
μA
nA
V~
V~
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
g
J
V
I
R
t
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Fast intrinsic diode
• Avalanche Rated
• Low R
• Low package inductance
Advantages
• Easy to mount
• Space savings
• High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC and DC motor control
• Uninterrupted power supplies
• High speed power switching
miniBLOC, SOT-227 B
D25
rr
power supplies
applications
DS(on)
DSS
E153432
DS(ON)
= 300V
= 110A
≤ ≤ ≤ ≤ ≤ 24mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200ns
and Q
G
G
D = Drain
S
DS99571F(05/08)
D
S

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IXFN140N30P Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS 10V 70A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFN140N30P Maximum Ratings 300 = 1MΩ 300 GS ±20 ± 30 110 100 300 ≤ 150° 700 -55 ... +150 150 -55 ... +150 300 t = 1min 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... I = 70A 72 DSS D 60 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 0.6 6.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN140N30P Max. SOT-227B Outline °C/W 0.18 °C/W Max. 140 A 560 A 1.3 V 200 ns μC A ...

Page 3

... IXYS CORPORATION, All rights reserved 280 = 10V 8V 240 200 7V 160 120 6V 5V 2.5 3.0 3.5 4.0 = 10V 70A Value 125º 25ºC J 160 200 240 280 IXFN140N30P Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3 10V GS 2.8 2 140A 2 ...

Page 4

... V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC 5.5 6.0 6.5 7 25ºC J 1.0 1.1 1.2 1.3 1.4 C iss C oss C rss IXFN140N30P Fig. 8. Transconductance 140 120 100 40ºC J 25ºC 125º 100 120 I - Amperes D Fig. 10. Gate Charge ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFN140N30P 0.1 1 IXYS REF: F_140N30P(93)5-13-08-B 10 ...

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