IXFN160N30T IXYS, IXFN160N30T Datasheet

MOSFET N-CH 300V 130A SOT227

IXFN160N30T

Manufacturer Part Number
IXFN160N30T
Description
MOSFET N-CH 300V 130A SOT227
Manufacturer
IXYS
Series
GigaMOS™r
Datasheet

Specifications of IXFN160N30T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
335nC @ 10V
Input Capacitance (ciss) @ Vds
28000pF @ 25V
Power - Max
900W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
130
Rds(on), Max, Tj=25°c, (?)
0.019
Ciss, Typ, (pf)
28000
Qg, Typ, (nc)
335
Trr, Typ, (ns)
-
Trr, Max, (ns)
-
Pd, (w)
900
Rthjc, Max, (k/w)
0.138
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN160N30T
Manufacturer:
IXYS
Quantity:
1 000
GigaMOS
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 60A, Note 1
GS
DS
= 0V
DSS
= 0V
, T
t = 1 minute
t = 1 second
J
GS
≤ 150°C
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXFN160N30T
-55 ... +150
-55 ... +150
Characteristic Values
Min.
300
2.5
Maximum Ratings
1.3/11.5
1.5/13
2500
3000
130
300
300
±20
±30
440
900
150
300
260
30
40
20
Typ.
3
±200 nA
Nm/lb.in.
Nm/lb.in.
Max.
5.0
19 mΩ
50
3 mA
V/ns
V~
V~
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
Advantages
Applications
miniBLOC, SOT-227
G = Gate
S = Source
D25
Isolation
rr
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation voltage 2500
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
E153432
DS(on)
G
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
S
D = Drain
300V
130A
19mΩ Ω Ω Ω Ω
200ns
D
DS100128(03/09)
V~
S

Related parts for IXFN160N30T

IXFN160N30T Summary of contents

Page 1

... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN160N30T Maximum Ratings 300 = 1MΩ 300 GS ±20 ±30 130 440 ≤ 150° 900 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 ...

Page 2

... I = 80A 123 DSS D 56 0.05 Characteristic Values Min. Typ. JM 1.09 13 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN160N30T Max. SOT-227B (IXFN) Outline (M4 screws (4x) supplied 0.138 °C/W °C/W Max. 160 A 640 A 1.3 V 200 ns µC A 6,404,065 B1 ...

Page 3

... 80A Value D 140 120 T = 125ºC J 100 T = 25ºC J 160 200 240 280 IXFN160N30T Fig. 2. Extended Output Characteristics @ 25ºC 300 V = 10V GS 7V 250 200 6V 150 5.5V 100 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.8 2 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. = 125ºC 25ºC - 40ºC 4.6 5.0 5.4 5.8 6.2 - Volts T = 25ºC J 0.8 1.0 1.2 1.4 C iss C oss C rss IXFN160N30T Fig. 8. Transconductance 300 250 200 150 100 100 I - Amperes D Fig. 10. Gate Charge 150V ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFN160N30T 1 10 IXYS REF: F_160N30T (9E)03-23-09 ...

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