IXFN55N50 IXYS, IXFN55N50 Datasheet - Page 2

MOSFET N-CH 500V 55A SOT-227B

IXFN55N50

Manufacturer Part Number
IXFN55N50
Description
MOSFET N-CH 500V 55A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN55N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
625W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.09 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
55 A
Power Dissipation
625 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
55
Rds(on), Max, Tj=25°c, (?)
0.08
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
595
Rthjc, Max, (ºc/w)
0.21
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN55N50
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXFN55N50
Manufacturer:
APT
Quantity:
300
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
(T
Symbol
I
I
V
t
Q
I
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
RM
d(on)
d(off)
f
S
SM
r
rr
PLUS247 Outline
fs
thJC
thCK
thCK
SD
iss
oss
rss
g(on)
gd
RM
gs
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
V
V
IXFK, IXFX
V
Repetitive;
pulse width limited by T
I
DS
GS
F
GS
= 100 A, V
Test Conditions
Test Conditions
I
= 0 V, V
V
R
V
F
= 10 V; I
= 0
GS
GS
G
= 25 A, -di/dt = 100 A/µs, V
= 10 V, V
= 1 Ω (External),
= 10 V, V
DS
GS
D
= 25 V, f = 1 MHz
= 0.5 • I
= 0 V
DS
DS
4,835,592
4,850,072
4,881,106
= 0.5 • V
= 0.5 • V
D25
JM
Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
R
D
D
Note 1
= 100 V
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Terminals:
Characteristic Values
Characteristic Values
1 - Gate
9400
1280
Typ.
Typ.
0.15
0.05
1.0
460
120
330
155
10
6,162,665
6,259,123 B1
6,306,728 B1
45
45
60
45
55
0.20
Max.
Max.
220
250
1.5
55
2 - Collector
IXFK55N50
6,404,065 B1
6,534,343
6,583,505
K/W
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
A
miniBLOC (SOT-227B) Outline
TO-264 AA Outline
M4 screws (4x) supplied
6,683,344
6,710,405B2
6,710,463
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
Min.
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
25.91
19.81
20.32
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Millimeter
Millimeter
5.46 BSC
6,727,585
6,759,692
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
IXFX55N50
IXFN55N50
0.1
Min.
1.020
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
.215 BSC
Min.
Inches
Inches
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Max.

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