IXFN80N50 IXYS, IXFN80N50 Datasheet - Page 2

MOSFET N-CH 500V 80A SOT-227B

IXFN80N50

Manufacturer Part Number
IXFN80N50
Description
MOSFET N-CH 500V 80A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN80N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
9890pF @ 25V
Power - Max
780W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.055 Ohms
Forward Transconductance Gfs (max / Min)
70 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
780 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.055
Ciss, Typ, (pf)
9890
Qg, Typ, (nc)
380
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
694
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN80N50
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXFN80N50P
Manufacturer:
ARTESYN
Quantity:
1 000
Part Number:
IXFN80N50P
Quantity:
122
Part Number:
IXFN80N50Q2
Manufacturer:
WESTINGHOUSE
Quantity:
228
Part Number:
IXFN80N50Q2
Quantity:
123
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
d(on)
d(off)
f
S
SM
RM
r
rr
fs
SD
iss
oss
G(on)
GD
thJC
thCK
rss
GS
RM
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t < 300 ms, duty cycle d < 2 %
I
F
F
DS
GS
= I
= 30A, -di/dt = 100 A/µs, V
= 15 V; I
S
= 0 V
V
V
R
V
, V
GS
GS
GS
G
GS
= 1 Ω (External),
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, pulse test
JM
R
DSS
DSS
(T
(T
= 100 V
, I
, I
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
= 0.5 • I
= 0.5 • I
min.
D25
D25
50
min.
Characteristic Values
Characteristic Values
4,835,592
4,850,072
9890
1750
0.05
typ.
typ.
1.2
460
102
380
173
70
61
70
27
80
8
4,881,106
4,931,844
0.16
max.
max.
320
250
1.3
80
K/W
K/W
5,017,508
5,034,796
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
miniBLOC, SOT-227 B
5,049,961
5,063,307
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
Min.
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
Millimeter
5,187,117
5,237,481
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
IXFN 80N50
0.1
5,486,715
5,381,025
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
Min.
Inches
6,306,728B1
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Max.

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