IXFN66N50Q2 IXYS, IXFN66N50Q2 Datasheet - Page 4

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IXFN66N50Q2

Manufacturer Part Number
IXFN66N50Q2
Description
MOSFET N-CH 500V 66A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN66N50Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
66A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
199nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
735W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.074 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
66 A
Power Dissipation
735 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
66
Rds(on), Max, Tj=25°c, (?)
0.08
Ciss, Typ, (pf)
9125
Qg, Typ, (nc)
200
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
735
Rthjc, Max, (ºc/w)
0.17
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN66N50Q2
Manufacturer:
INFINEON
Quantity:
1 000
Part Number:
IXFN66N50Q2
Quantity:
121
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
180
160
140
120
100
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
0.4
0
3
0.5
f = 1MHz
3.5
5
T
T
J
J
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
= 125∫C
Fig. 9. Source Current vs.
0.6
Source-To-Drain Voltage
= 125∫C
-40∫C
10
25∫C
4
0.7
V
4.5
V
15
V
G S
S D
D S
0.8
- Volts
- Volts
20
- Volts
5
T
0.9
J
C oss
C rss
C iss
= 25∫C
5.5
25
1
30
6
1.1
6.5
35
1.2
1.3
40
7
1000
100
80
70
60
50
40
30
20
10
10
10
0
9
8
7
6
5
4
3
2
1
0
1
10
0
0
T
R
J
V
I
I
T
T
D
G
20
DS(on)
DS
J
C
= -40∫C
125∫C
= 33A
= 10mA
= 150∫C
Fig. 8. Transconductance
= 25∫C
25∫C
20
= 250V
40
Fig. 10. Gate Charge
Limit
Fig. 12. Forw ard-Bias
Safe Operating Area
Q
60
40
G
I
- nanoCoulombs
D
V
80
- Amperes
D S
DC
100
100 120 140 160 180 200
60
- Volts
IXFN66N50Q2
80
100
100µs
1ms
25µs
10ms
1000
120

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