IXFN150N15 IXYS, IXFN150N15 Datasheet - Page 2

• Manufacturer Part Number: IXFN150N15
• Description: MOSFET N-CH 150V 150A SOT-227
• Manufacturer: IXYS

Specifications of IXFN150N15

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 9100pF @ 25V
• Power - Max: 600W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0125 Ohms
• Forward Transconductance Gfs (max / Min): 75 s
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 150 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 150
• Rds(on), Max, Tj=25°c, (?): 0.0125
• Ciss, Typ, (pf): 9100
• Qg, Typ, (nc): 360
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 595
• Rthjc, Max, (ºc/w): 0.21
• Package Style: SOT-227B
• Lead Free Status / Rohs Status: Details
• Other names: Q3181657

© 2000 IXYS All rights reserved
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
(T
Symbol
I
I
V
t
Q
I
Notes:
S
SM
RM
d(on)
d(off)
f
r
rr
fs
SD
oss
thJC
thCK
iss
rss
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
V
V
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
V
Repetitive;
pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
F
DS
GS
1. Pulse width limited by T
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
GS
= 100 A, V
Test Conditions
Test Conditions
= 0 V, V
V
R
V
= 10 V; I
= 0
I
GS
GS
G
F
= 50 A, -di/dt = 100 A/ms, V
= 10 V, V
= 1 W (External),
= 10 V, V
DS
D
GS
= 60A, Note 2
= 25 V, f = 1 MHz
= 0 V,
DS
DS
= 0.5 • V
= 0.5 • V
JM
JM.
DSS
DSS
, I
, I
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
D
D
= 0.5 • I
= 0.5 • I
R
= 50 V
D25
D25
4,881,106
4,931,844
Min.
Min.
50
Characteristic Values
Characteristic Values
5,017,508
5,034,796
9100
2600
1200
Typ.
Typ.
0.05
1.1
13
110
360
190
75
50
60
45
65
0.21
Max.
250
150
600
Max.
1.5
5,049,961
5,063,307
K/W
K/W
mC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
5,187,117
5,237,481
miniBLOC, SOT-227 B
5,486,715
5,381,025
Dim.
M4 screws (4x) supplied
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
IXFN 150N10
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
Min.
Millimeter
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
0.1 -0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
Min.
Inches
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Max.
2 - 2