IXFN44N100P IXYS, IXFN44N100P Datasheet - Page 4
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IXFN44N100P
Manufacturer Part Number
IXFN44N100P
Description
MOSFET N-CH 1000V 37A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFN44N100P.pdf
(4 pages)
Specifications of IXFN44N100P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
37A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
305nC @ 10V
Input Capacitance (ciss) @ Vds
19000pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.22 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
37 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
37
Rds(on), Max, Tj=25°c, (?)
0.22
Ciss, Typ, (pf)
19000
Qg, Typ, (nc)
305
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
890
Rthjc, Max, (ºc/w)
0.14
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN44N100P
Manufacturer:
COSEL
Quantity:
1 000
Part Number:
IXFN44N100P
Quantity:
106
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
130
120
110
100
90
80
70
60
50
40
30
20
10
50
45
40
35
30
25
20
15
10
100
5
0
0
10
0.3
5
0
0.4
f = 1 MHz
5.5
5
Fig. 9. Forward Voltage Drop of
0.5
6
Fig. 7. Input Admittance
10
Fig. 11. Capacitance
0.6
T
Intrinsic Diode
6.5
J
15
V
V
T
V
= 125ºC
SD
GS
J
DS
0.7
- 40ºC
= 125ºC
25ºC
- Volts
- Volts
- Volts
7
20
0.8
C oss
C rss
C iss
7.5
25
0.9
T
J
= 25ºC
30
8
1
8.5
35
1.1
1.2
40
9
1.000
0.100
0.010
0.001
60
55
50
45
40
35
30
25
20
15
10
16
14
12
10
0.0001
5
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
5
50
Fig. 12. Maximum Transient Thermal
= 22A
= 10mA
= 500V
0.001
10
100
Fig. 8. Transconductance
15
Fig. 10. Gate Charge
Q
150
Pulse Width - Seconds
G
- NanoCoulombs
0.01
20
Impedance
I
D
200
- Amperes
25
IXFN44N100P
250
30
0.1
IXYS REF: F_44N100P(97)4-01-08-D
T
300
J
35
= - 40ºC
350
25ºC
40
125ºC
1
400
45
450
50
10