IXFN23N100 IXYS, IXFN23N100 Datasheet
IXFN23N100
Manufacturer Part Number
IXFN23N100
Description
MOSFET N-CH 1000V 23A SOT-227B
Manufacturer
IXYS
Datasheet
1.IXFN23N100.pdf
(4 pages)
Specifications of IXFN23N100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
5V @ 8mA
Power - Max
595W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.39 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
568 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
23
Rds(on), Max, Tj=25°c, (?)
0.43
Ciss, Typ, (pf)
7000
Qg, Typ, (nc)
250
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
595
Rthjc, Max, (ºc/w)
0.21
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN23N100
Manufacturer:
IXYS
Quantity:
200
HiPerFET
Power MOSFET
Single MOSFET Die
Symbol Test Conditions
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
V
V
I
I
R
© 2005 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
stg
L
GSM
AR
AS
J
GS(th)
DSS
DGR
GS
D
ISOL
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
T
T
T
T
Continuous
Transient
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
Note 2
S
ISOL
C
C
J
J
C
C
J
C
GS
DS
GS
DS
GS
GS
C
= 25°C;
= 25°C
= 25°C
= 25∞C to 150∞C
= 25∞C to 150∞C, R
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20V, V
= V
= 0 V
= 10V, I
≤ 1 mA
Test Conditions
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
D
= 3mA
= 8mA
= 0.5 ï I
GS
Note 1
TM
G
= 0V
= 2 Ω
t = 1 min
t = 1 s
D25
GS
= 1MΩ
DD
≤ V
DSS
T
T
23N100
24N100
J
J
= 25°C
= 125°C
1000
Min.
3.0
24N100
23N100
24N100
23N100
Characteristic Values
IXFN 24N100 1000 V 24 A
IXFN 23N100 1000 V 23 A
Typ.
-55 ... +150
-55 ... +150
Maximum Ratings
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
1000
1000
2500
3000
150
±20
±30
300
600
Max.
60
24
23
96
92
24
30
±100 nA
0.43
0.39
100 µA
3
5
5.5
2
V/ns
mA
mJ
°C
°C
°C
°C
V~
V~
W
Ω
Ω
A
A
A
V
V
V
V
A
A
g
V
V
J
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
•
•
•
Applications
•
•
•
•
•
•
•
Advantages
•
•
•
t
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
rr
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
V
DSS
≤ ≤ ≤ ≤ ≤ 250 ns
E153432
DS (on)
HDMOS
I
G
D25
D = Drain
S
TM
process
98597E (07/05)
0.39 Ω Ω Ω Ω Ω
0.43 Ω Ω Ω Ω Ω
D
R
DS(on)
S
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IXFN23N100 Summary of contents
Page 1
... GSS DSS DS DSS 10V 0.5 ï I DS(on D25 Note 2 © 2005 IXYS All rights reserved IXFN 24N100 1000 IXFN 23N100 1000 Maximum Ratings 1000 1000 ±20 ±30 24N100 23N100 24N100 23N100 ≤ DSS 600 -55 ... +150 150 -55 ... +150 300 2500 3000 1 ...
Page 2
... Notes: 1. Pulse width limited by T JM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values Min. ...
Page 3
... V - Volts DS Figure 3. R normalized to 0.5 I DS(on) 2.4 2 10V 2.0 1 24A 1.6 1 12A 1.2 1.0 0 100 T - Degrees C J Figure 5. R normalized to 0.5 I DS(on) © 2005 IXYS All rights reserved Figure 2. Extended Output Characteristics at 125 value vs. I Figure 4. Admittance Curves D25 D 125 150 value vs ...
Page 4
... V - Volts SD Figure 8. Forward Voltage Drop of the Intrinsic Diode 0.300 0.100 0.010 0.001 - Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. 20000 10000 250 300 350 2.0 2 IXFN 23N100 IXFN 24N100 Ciss Coss ...