IXFN48N50U2 IXYS, IXFN48N50U2 Datasheet - Page 5

• Manufacturer Part Number: IXFN48N50U2
• Description: MOSFET N-CH 500V 48A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN48N50U2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 8400pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 48 A
• Power Dissipation: 520 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Vdss, Max, (v): 500
• Id25, Tc = 25°c, (a): 48
• Id90, Tc = 90°c, (a): 36
• Rds(on), Max, Tj = 25°c, (mohms): 100
• Tf, Typ, (ns): 30
• Tr, Typ, (ns): 60
• Rthjc, Max, (ºc/w): 0.24
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig. 14. Dynamic parameters versus
Fig. 17. Transient thermal impedance junction to case.
Fig. 11. Forward voltage drop.
junction temperature.
Fig. 12. Recovery charge versus -di
Fig. 15. Recovery time versus -di
IXFN44N50U2
IXFN44N50U3
F
/dt.
F
/dt.
Fig. 13. Peak reverse current vs. -di
Fig. 16. Peak forward voltage and forward
recovery time vs. di
IXFN48N50U2
IXFN48N50U3
F
/dt.
F
5 - 5
/dt.