IXFN38N100P IXYS, IXFN38N100P Datasheet - Page 4

• Manufacturer Part Number: IXFN38N100P
• Description: MOSFET N-CH 1000V 38A SOT-227B
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN38N100P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 24000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.21 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 38 A
• Power Dissipation: 1000 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 38
• Rds(on), Max, Tj=25°c, (?): 0.21
• Ciss, Typ, (pf): 24000
• Qg, Typ, (nc): 350
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1000
• Rthjc, Max, (ºc/w): 0.125
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
110
100
100
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
10
0
0
0.3
5.5
0
f
0.4
= 1 MHz
6.0
5
0.5
6.5
Fig. 9. Forward Voltage Drop of
10
0.6
Fig. 7. Input Admittance
7.0
Fig. 11. Capacitance
T
15
Intrinsic Diode
0.7
J
V
V
= 125ºC
V
SD
GS
DS
7.5
- Volts
- Volts
- Volts
0.8
T
20
J
= 125ºC
8.0
- 40ºC
25ºC
0.9
25
T
8.5
J
C iss
C oss
C rss
= 25ºC
1.0
30
9.0
1.1
9.5
35
1.2
10.0
1.3
40
1,000.0
100.0
10.0
1.0
0.1
65
60
55
50
45
40
35
30
25
20
15
10
16
14
12
10
5
0
8
6
4
2
0
10
0
0
R
V
I
I
T
T
Single Pulse
DS(on)
D
G
J
C
DS
= 150ºC
50
= 19A
= 10mA
= 25ºC
10
= 500V
Limit
Fig. 12. Forward-Bias Safe Operating Area
100
100ms
DC
20
Fig. 8. Transconductance
150
10ms
30
Fig. 10. Gate Charge
Q
G
I
- NanoCoulombs
200
D
- Amperes
40
V
DS
1ms
250
100
IXFN38N100P
- Volts
50
300
125ºC
60
350
100µs
T
25ºC
J
70
= - 40ºC
400
25µs
80
450
1,000
500
90