IXFN38N100P IXYS, IXFN38N100P Datasheet - Page 4
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IXFN38N100P
Manufacturer Part Number
IXFN38N100P
Description
MOSFET N-CH 1000V 38A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFN38N100P.pdf
(5 pages)
Specifications of IXFN38N100P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
350nC @ 10V
Input Capacitance (ciss) @ Vds
24000pF @ 25V
Power - Max
1000W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.21 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
38 A
Power Dissipation
1000 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
38
Rds(on), Max, Tj=25°c, (?)
0.21
Ciss, Typ, (pf)
24000
Qg, Typ, (nc)
350
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1000
Rthjc, Max, (ºc/w)
0.125
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN38N100P
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
IXFN38N100P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXFN38N100P
Quantity:
108
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
110
100
100
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
10
0
0
0.3
5.5
0
f
0.4
= 1 MHz
6.0
5
0.5
6.5
Fig. 9. Forward Voltage Drop of
10
0.6
Fig. 7. Input Admittance
7.0
Fig. 11. Capacitance
T
15
Intrinsic Diode
0.7
J
V
V
= 125ºC
V
SD
GS
DS
7.5
- Volts
- Volts
- Volts
0.8
T
20
J
= 125ºC
8.0
- 40ºC
25ºC
0.9
25
T
8.5
J
C iss
C oss
C rss
= 25ºC
1.0
30
9.0
1.1
9.5
35
1.2
10.0
1.3
40
1,000.0
100.0
10.0
1.0
0.1
65
60
55
50
45
40
35
30
25
20
15
10
16
14
12
10
5
0
8
6
4
2
0
10
0
0
R
V
I
I
T
T
Single Pulse
DS(on)
D
G
J
C
DS
= 150ºC
50
= 19A
= 10mA
= 25ºC
10
= 500V
Limit
Fig. 12. Forward-Bias Safe Operating Area
100
100ms
DC
20
Fig. 8. Transconductance
150
10ms
30
Fig. 10. Gate Charge
Q
G
I
- NanoCoulombs
200
D
- Amperes
40
V
DS
1ms
250
100
IXFN38N100P
- Volts
50
300
125ºC
60
350
100µs
T
25ºC
J
70
= - 40ºC
400
25µs
80
450
1,000
500
90