IXTN40P50P IXYS, IXTN40P50P Datasheet - Page 2

• Manufacturer Part Number: IXTN40P50P
• Description: MOSFET P-CH 500V 40A SOT227
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTN40P50P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 205nC @ 10V
• Input Capacitance (ciss) @ Vds: 11500pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): -500.0
• Id(cont), Tc=25°c, (a): -40.0
• Rds(on), Max, Tj=25°c, (?): 0.230
• Ciss, Typ, (pf): 11500
• Qg, Typ, (nc): 205
• Trr, Typ, (ns): 477
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, pulse width limited by T
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= - 20A, V
= - 20A, -di/dt = -150A/μs
= -100V, V
= -10V, I
= 0V, V
= -10V, V
= 1Ω (External)
= -10V, V
= 0V
DS
GS
D
DS
DS
GS
= - 25V, f = 1MHz
= 0.5 • I
= 0V, Note 1
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
= 0V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
23
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
1150
0.05
11.5
Typ.
205
Typ.
14.5
38
- 61
93
37
59
90
34
55
75
477
0.14 °C/W
- 160
Max.
- 3.0
6,404,065 B1
6,534,343
6,583,505
- 40
Max.
°C/W
μC
nS
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXTN) Outline
6,727,585
6,771,478 B2 7,071,537
(Μ4 σχρεωσ (4ξ) συππλιεδ)
IXTN40P50P
7,005,734 B2
7,063,975 B2
7,157,338B2