IXTN40P50P IXYS, IXTN40P50P Datasheet - Page 3

• Manufacturer Part Number: IXTN40P50P
• Description: MOSFET P-CH 500V 40A SOT227
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTN40P50P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 205nC @ 10V
• Input Capacitance (ciss) @ Vds: 11500pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): -500.0
• Id(cont), Tc=25°c, (a): -40.0
• Rds(on), Max, Tj=25°c, (?): 0.230
• Ciss, Typ, (pf): 11500
• Qg, Typ, (nc): 205
• Trr, Typ, (ns): 477
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
-40
-35
-30
-25
-20
-15
-10
-40
-35
-30
-25
-20
-15
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-5
-5
0
0
0
0
0
V
Fig. 5. R
GS
-10
-1
-2
= -10V
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
-20
-2
-4
DS(on)
-30
-3
-6
Drain Current
Normalized to I
I
D
V
V
@ 125ºC
-40
@ 25ºC
-4
-8
- Amperes
DS
DS
- Volts
- Volts
-10
-50
-5
V
V
GS
GS
= -10V
-12
-60
-6
= -10V
T
D
- 7V
J
- 7V
- 6V
- 5V
T
- 6V
- 5V
= - 20A vs.
= 125ºC
J
= 25ºC
-70
-14
-7
-16
-80
-8
-90
-18
-9
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0
-50
-50
0
V
Fig. 4. R
Fig. 2. Extended Output Characteristics
GS
-3
-25
-25
= -10V
Fig. 6. Maximum Drain Current vs.
-6
DS(on)
0
0
Junction Temperature
-9
T
Case Temperature
T
J
J
- Degrees Centigrade
- Degrees Centigrade
Normalized to I
25
25
-12
@ 25ºC
V
DS
-15
50
50
- Volts
I
D
= - 40A
-18
V
GS
75
75
IXTN40P50P
= -10V
-21
D
- 8V
- 7V
- 6V
= - 20A vs.
I
100
100
D
= - 20A
-24
125
125
-27
150
150
-30