IXFN26N120P IXYS, IXFN26N120P Datasheet - Page 2
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IXFN26N120P
Manufacturer Part Number
IXFN26N120P
Description
MOSFET N-CH 1200V 23A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFN26N120P.pdf
(4 pages)
Specifications of IXFN26N120P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
460 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
225nC @ 10V
Input Capacitance (ciss) @ Vds
14000pF @ 25V
Power - Max
695W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.46 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
23 A
Power Dissipation
695 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
23
Rds(on), Max, Tj=25°c, (?)
0.5
Ciss, Typ, (pf)
14000
Qg, Typ, (nc)
255
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
695
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN26N120P
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
IXFN26N120P
Quantity:
146
Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
Gate input resistance
V
V
Repetitive, pulse width limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 13A, -di/dt = 100A/μs
= I
= 100V
= 1Ω (External)
= 10V, V
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
DS
= 13A, Note 1
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
DSS
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 13A
= 13A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
13
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
0.05
Typ.
725
225
1.3
1.5
12
14
50
56
55
76
58
87
98
21
0.18 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
104
1.5
300 ns
26
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN26N120P
7,005,734 B2
7,063,975 B2
7,157,338B2