IXFN52N90P IXYS, IXFN52N90P Datasheet

MOSFET N-CH 900V 43A SOT227

IXFN52N90P

Manufacturer Part Number
IXFN52N90P
Description
MOSFET N-CH 900V 43A SOT227
Manufacturer
IXYS
Series
Polar™r
Type
Polar Power MOSFETr
Datasheet

Specifications of IXFN52N90P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
308nC @ 10V
Input Capacitance (ciss) @ Vds
19000pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Product
MOSFET Gate Drivers
Rise Time
80 ns
Fall Time
42 ns
Supply Current
26 A
Maximum Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
95 ns
Maximum Turn-on Delay Time
63 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
43 A
Output Voltage
900 V
Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
43
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
19000
Qg, Typ, (nc)
308
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
890
Rthjc, Max, (ºc/w)
0.14
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
V
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
ISOL
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
D
DD
D
D
= 3mA
= 1mA
= 26A, Note 1
≤ V
DS
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
t = 1s
t = 1min
JM
IXFN52N90P
900
3.5
-55 ... +150
-55 ... +150
Min.
Characteristic Values
Maximum Ratings
1.3/11.5
1.5/13
2500
3000
± 30
± 40
900
900
104
890
150
300
Typ.
43
26
20
30
2
± 200
Max.
160 mΩ
Nm/lb.in.
Nm/lb.in.
6.5
50
4 mA
V/ns
V~
V~
nA
μA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
J
g
V
I
R
t
miniBLOC, SOT-227
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
Advantages
Applications:
D25
rr
International standard package
miniBLOC, with Aluminium nitride
Avalanche Rated
Low package inductance
Fast intrinsic diode
Low gate drive requirement
High power density
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
isolation
DS(on)
DSS
E153432
G
= 900V
= 43A
≤ ≤ ≤ ≤ ≤ 160mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
S
D = Drain
D
DS100065(10/08)
S

Related parts for IXFN52N90P

IXFN52N90P Summary of contents

Page 1

... D = ± 30V GSS DSS DS DSS 10V 26A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFN52N90P Maximum Ratings 900 = 1MΩ 900 GS ± 30 ± 104 ≤ 150° 890 -55 ... +150 150 -55 ... +150 300 t = 1min 2500 3000 1.5/13 1.3/11.5 ...

Page 2

... DSS 308 , I = 26A 117 DSS D 132 0.05 Characteristic Values Min. Typ. JM 1.8 26 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN52N90P Max. SOT-227B Outline S Ω 0.14 °C/W °C/W Max 208 A 1.5 V 300 ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... Value 125º 25º IXFN52N90P Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 52A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions 7.5 8.0 8.5 9.0 9 25ºC J 0.9 1.0 1.1 1.2 1.3 1.000 C iss 0.100 C oss 0.010 C rss 0.001 IXFN52N90P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 450V 26A 10mA 100 150 200 250 Q - NanoCoulombs G Fig ...

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