IXFN50N80Q2 IXYS, IXFN50N80Q2 Datasheet

MOSFET N-CH 800V 50A SOT-227B

IXFN50N80Q2

Manufacturer Part Number
IXFN50N80Q2
Description
MOSFET N-CH 800V 50A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN50N80Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
13500pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
50 A
Power Dissipation
1135 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
13500
Qg, Typ, (nc)
260
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1135
Rthjc, Max, (ºc/w)
0.11
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN50N80Q2
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXFN50N80Q2
Quantity:
339
Part Number:
IXFN50N80Q2
Quantity:
115
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
rr
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 8mA
= 0.5 • I
GS
DS
g
= 0V
DSS
, Low Intrinsic R
= 0V
, T
t = 1 minute
t = 1 second
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
G
JM
IXFN50N80Q2
Min.
800
Characteristic Values
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
1135
2500
3000
800
800
±30
±40
200
150
300
260
Typ.
50
30
50
20
5
±200 nA
160 mΩ
Nm/lb.in.
Nm/lb.in.
Max.
5.5
50
3 mA
V/ns
V~
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
Advantages
Applications
miniBLOC, SOT-227
G = Gate
S = Source
D25
rr
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation Voltage 2500
High Current Handling Capability
Fast Intrinsic Rectifier
Avalanche Rated
Switch-Mode and Resonant-Mode
Power Supplies >500kHz Switching
DC-DC Converters
Pulse Generation
Laser Drivers
Isolation
Low R
Easy to Mount
Space Savings
High Power Density
DC Choppers
DSS
DS(on)
E153432
DS(on)
G
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
=
=
S
D = Drain
160mΩ Ω Ω Ω Ω
300ns
800V
50A
D
DS99028C(01/10)
V~
S

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IXFN50N80Q2 Summary of contents

Page 1

... GS(th ±30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved IXFN50N80Q2 G Maximum Ratings 800 = 1MΩ 800 GS ±30 ±40 50 200 ≤ 150° 1135 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... I = 0.5 • DSS D D25 120 0.05 Characteristic Values Min. Typ. JM 1.1 8.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN50N80Q2 SOT-227B (IXFN) Outline Max (M4 screws (4x) supplied 0.11 °C/W °C/W Max 200 A 1.5 V 300 ns μC A 6,404,065 B1 ...

Page 3

... J 3 10V GS 2.8 6V 2.4 5V 2.0 1.6 1.2 0.8 0 25A Value vs 125º 25º 100 110 IXFN50N80Q2 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 0 -50 -25 0 ...

Page 4

... T = 25º 1.0 1.2 1.4 1.000 0.200 0.100 C iss C oss 0.010 C rss 0.001 0.00001 IXFN50N80Q2 Fig. 8. Transconductance 40ºC J 125º Amperes D Fig. 10. Gate Charge V = 400V 25A 10mA G Fig. 12. Maximum Transient Thermal Impedance 120 160 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance ...

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