VMO550-01F IXYS, VMO550-01F Datasheet
VMO550-01F
Manufacturer Part Number
VMO550-01F
Description
MOSFET N-CH 100V 590A Y3-DCB
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.VMO550-01F.pdf
(2 pages)
Specifications of VMO550-01F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.1 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
590A
Vgs(th) (max) @ Id
6V @ 110mA
Gate Charge (qg) @ Vgs
2000nC @ 10V
Input Capacitance (ciss) @ Vds
50000pF @ 25V
Power - Max
2200W
Mounting Type
Chassis Mount
Package / Case
Y3-DCB
Vdss, Max, (v)
100
Id25, Tc = 25°c, (a)
590
Id80, Tc = 80°c, (a)
440
Rds(on), Max, Tj = 25°c, (mohms)
2.10
Tf, Typ, (ns)
200
Tr, Typ, (ns)
500
Rthjc, Max, (k/w)
0.057
Package Style
Y3-DCB (w/o terminal 3)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VMO550-01F
Quantity:
83
HiPerFET
MOSFET Module
N-Channel Enhancement Mode
Preliminary Data
Symbol
V
V
V
V
I
I
I
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
D25
D80
DM
GSS
DSS
J
JM
stg
DGR
D
ISOL
GS(th)
DSS
GS
GSM
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
50/60 Hz
I
Mounting torque (M6)
Terminal connection torque (M5)
typical including screws
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
ISOL
J
J
S
S
S
C
S
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 80°C
= 25°C
= 25°C
= 25°C
= 0 V
£ 1 mA
= 0 V, I
= 20 V, I
= ±20 V DC, V
= 0.8 • V
= 10 V, I
TM
D
D
D
DSS
= 6 mA
= 110 mA
= 0.5 • I
DS
pulse width limited by T
t = 1 min
t = 1 s
= 0
D25
GS
= 10 kW
(T
T
T
J
J
J
= 25°C, unless otherwise specified)
= 25°C
= 125°C
2.25-2.75/20-25 Nm/lb.in.
min.
VMO 550-01F
100
JM
2.5-3.7/22-33 Nm/lb.in.
Characteristic Values
-40 ... +125
3
-40 ...+150
Maximum Ratings
typ.
2360
2200
1470
3000
3600
G
KS
100
100
±20
±30
590
440
150
250
max.
±500 nA
2.1 mW
12 mA
6
3 mA
V
V
V
V
A
A
A
W
W
°C
°C
°C
V~
g
D
S
V
V
V
I
R
D = Drain
KS = Kelvin Source G = Gate
Features
Applications
Advantages
D25
International standard package
Direct Copper Bonded Al
base plate
Isolation voltage 3600 V~
Low R
Low package inductance for high
speed switching
Kelvin Source contact for easy drive
AC motor speed control for electric
vehicles
DC servo and robot drives
Switched-mode and resonant-mode
power supplies
DC choppers
Easy to mount
Space and weight savings
High power density
Low losses
DSS
DS(on)
D
E 72873
DS(on)
S
HDMOS
= 100 V
= 590 A
= 2.1 mW
TM
S = Source
process
G
2
O
KS
3
ceramic
1 - 2
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VMO550-01F Summary of contents
Page 1
... DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved VMO 550-01F G KS Maximum Ratings 100 = 10 kW 100 GS ±20 ±30 590 440 2360 ...
Page 2
... Pulse test, t £ 300 ms, duty cycle d £ -di/dt = 1000 A/ms © 2000 IXYS All rights reserved IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. pulsed 330 D25 50 17.6 8.8 250 , I = 0.5 • ...