VMO550-01F IXYS, VMO550-01F Datasheet - Page 2

• Manufacturer Part Number: VMO550-01F
• Description: MOSFET N-CH 100V 590A Y3-DCB
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of VMO550-01F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 590A
• Vgs(th) (max) @ Id: 6V @ 110mA
• Gate Charge (qg) @ Vgs: 2000nC @ 10V
• Input Capacitance (ciss) @ Vds: 50000pF @ 25V
• Power - Max: 2200W
• Mounting Type: Chassis Mount
• Package / Case: Y3-DCB
• Vdss, Max, (v): 100
• Id25, Tc = 25°c, (a): 590
• Id80, Tc = 80°c, (a): 440
• Rds(on), Max, Tj = 25°c, (mohms): 2.10
• Tf, Typ, (ns): 200
• Tr, Typ, (ns): 500
• Rthjc, Max, (k/w): 0.057
• Package Style: Y3-DCB (w/o terminal 3)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
© 2000 IXYS All rights reserved
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
S
SM
d(on)
r
d(off)
f
rr
fs
iss
oss
rss
thJC
thJS
SD
g
gs
gd
Test Conditions
V
with 30 mm heat transfer paste
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
F
F
DS
GS
= I
= I
= 10 V; I
V
V
R
V
= 0 V
S
S
; V
, -di/dt = 1000 A/ms, V
GS
GS
GS
G
= 2 W (external)
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
pulsed
DS
DSS
DSS
(T
(T
= 0.5 • V
J
, I
, I
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
JM
= 0.5 • I
= 0.5 • I
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
DSS
D25
D25
min.
min.
Characteristic Values
Characteristic Values
2000
17.6
typ.
typ.
330
250
500
800
200
385
940
300
8.8
0.9
50
0.057 K/W
0.085 K/W
max.
max.
2360
590
1.2
nC
nC
nC
nF
nF
nF
ns
ns
ns
ns
ns
S
A
A
V
Dimensions in mm (1 mm = 0.0394")
5
VMO 550-01F
2 - 2