GP1S094HCZ0F Sharp Microelectronics, GP1S094HCZ0F Datasheet - Page 2

SENSOR OPTO SLOT 3MM TRANS THRU

GP1S094HCZ0F

Manufacturer Part Number
GP1S094HCZ0F
Description
SENSOR OPTO SLOT 3MM TRANS THRU
Manufacturer
Sharp Microelectronics
Type
Unamplifiedr
Datasheets

Specifications of GP1S094HCZ0F

Package / Case
PCB Mount
Sensing Distance
0.118" (3mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
35V
Response Time
50µs, 50µs
Mounting Type
Through Hole
Operating Temperature
-25°C ~ 85°C
No. Of Channels
1
Input Current
20mA
Output Voltage
35V
Opto Case Style
Through Hole
No. Of Pins
4
Operating Temperature Range
-25°C To +85°C
Output Type
Phototransistor
Output Collector Emitter Voltage (detector)
35 V
Maximum Reverse Voltage (emitter)
6 V
Maximum Collector Current (detector)
20 mA
Slot Width
3 mm
Aperture Width
0.3 mm
Output Device
Phototransistor
Power Dissipation
100 mW
Forward Voltage
1.2 V
Maximum Fall Time
150000 ns
Maximum Operating Temperature
+ 85 C
Maximum Rise Time
150000 ns
Minimum Operating Temperature
- 25 C
Optocoupler Output Type
Phototransistor
Svhc
No SVHC (15-Dec-2010)
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-1964-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GP1S094HCZ0F
Manufacturer:
TI
Quantity:
551
Part Number:
GP1S094HCZ0F
Manufacturer:
Sharp Microelectronics
Quantity:
10 000
Part Number:
GP1S094HCZ0F
0
■ Internal Connection Diagram
■ Outline Dimensions
Product mass : approx. 0.085g
Country of origin
3
2
Japan
Top view
∗∗
∗4.55
5.5
3
∗∗
(C0.3)
Top view
4
1
2
3
C0.2
0.15
φ 1
(C0.3)
Center of
light axis
+0
−0.1
+0.2
−0.1
• Unspecifi ed tolerance : ±0.2mm
• Dimensions in parenthesis are shown for
• The dimensions indicated by ∗ refer to those
• The dimensions shown do not include burr.
• ∗∗ The lead may be exposed at the shaded
• ∗∗∗ This portion has no SnCu plating.
Plating material : SnCu (Cu : TYP. 2%)
reference.
measured from the lead base.
Burr's dimension shall be : 0.15mm MAX.
portion.
(C0.4)
∗2
1
4
2.6
1
2
3
4
(0.05)
0.4
0.5
Anode
Collector
Emitter
Cathode
(0.3)Slit width
a-a' section
∗∗∗
(Unit : mm)
2
Sheet No.: D3-A00601EN
GP1S094HCZ0F

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