GP1S094HCZ0F Sharp Microelectronics, GP1S094HCZ0F Datasheet - Page 3

• Manufacturer Part Number: GP1S094HCZ0F
• Description: SENSOR OPTO SLOT 3MM TRANS THRU
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S094HCZ0F

• Package / Case: PCB Mount
• Sensing Distance: 0.118" (3mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 50µs, 50µs
• Mounting Type: Through Hole
• Operating Temperature: -25°C ~ 85°C
• No. Of Channels: 1
• Input Current: 20mA
• Output Voltage: 35V
• Opto Case Style: Through Hole
• No. Of Pins: 4
• Operating Temperature Range: -25°C To +85°C
• Output Type: Phototransistor
• Output Collector Emitter Voltage (detector): 35 V
• Maximum Reverse Voltage (emitter): 6 V
• Maximum Collector Current (detector): 20 mA
• Slot Width: 3 mm
• Aperture Width: 0.3 mm
• Output Device: Phototransistor
• Power Dissipation: 100 mW
• Forward Voltage: 1.2 V
• Maximum Fall Time: 150000 ns
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 150000 ns
• Minimum Operating Temperature: - 25 C
• Optocoupler Output Type: Phototransistor
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-1964-5

■ Absolute Maximum Ratings
∗
■ Electro-optical Characteristics
1 For 5s or less
Output
Output Collector dark current
∗ 1
Transfer
teristics
charac-
Input
Input
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Forward voltage
Reverse current
Collector current
Collector-emitter saturation voltage
Response time
Parameter
Parameter
Rise time
Fall time
Symbol
V
V
T
T
T
P
V
P
I
I
P
CEO
ECO
opr
tot
stg
sol
F
C
C
R
Symbol
V
I
CE(sat)
V
CEO
I
I
t
t
R
C
r
f
− 40 to + 100
F
− 25 to + 85
Rating
100
260
50
75
35
20
75
6
6
V
CE
(T
3
= 5V, I
a
I
= 25˚C )
F
V
Unit
mW
mW
mW
= 10mA, I
mA
mA
˚C
˚C
˚C
V
V
V
CE
Condition
V
= 5V, I
I
C
F
V
= 100 μ A, R
= 20mA
CE
R
= 20V
= 3V
F
C
= 5mA
= 40 μ A
L
= 1k Ω
MIN.
40
−
−
−
−
−
−
Soldering area
1mm or more
TYP.
1.2
50
50
−
−
−
−
Sheet No.: D3-A00601EN
GP1S094HCZ0F
MAX.
100
400
150
150
1.4
0.4
10
(T
a
= 25˚C )
Unit
μ A
μ A
nA
μ s
μ s
V
V