GP1S094HCZ0F Sharp Microelectronics, GP1S094HCZ0F Datasheet - Page 6

• Manufacturer Part Number: GP1S094HCZ0F
• Description: SENSOR OPTO SLOT 3MM TRANS THRU
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S094HCZ0F

• Package / Case: PCB Mount
• Sensing Distance: 0.118" (3mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 50µs, 50µs
• Mounting Type: Through Hole
• Operating Temperature: -25°C ~ 85°C
• No. Of Channels: 1
• Input Current: 20mA
• Output Voltage: 35V
• Opto Case Style: Through Hole
• No. Of Pins: 4
• Operating Temperature Range: -25°C To +85°C
• Output Type: Phototransistor
• Output Collector Emitter Voltage (detector): 35 V
• Maximum Reverse Voltage (emitter): 6 V
• Maximum Collector Current (detector): 20 mA
• Slot Width: 3 mm
• Aperture Width: 0.3 mm
• Output Device: Phototransistor
• Power Dissipation: 100 mW
• Forward Voltage: 1.2 V
• Maximum Fall Time: 150000 ns
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 150000 ns
• Minimum Operating Temperature: - 25 C
• Optocoupler Output Type: Phototransistor
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-1964-5

■ Design Considerations
● Design guide
● Degradation
● Parts
• Photodetector (qty. : 1)
• Photo emitter (qty. : 1)
• Material
Phototransistor
1) Prevention of detection error
2) Position of opaque board
This product is not designed against irradiation and incorporates non-coherent IRED.
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
This product is assembled using the below parts.
sulfi de resin (UL94 V-0)
Infrared emitting diode
Black polyphernylene
Category
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
Opaque board shall be installed at place 1.6mm or more from the top of elements.
(Example)
(non-coherent)
Category
Case
Silicon (Si)
Material
1.6mm or more
Gallium arsenide (GaAs)
Maximum Sensitivity
Material
Lead frame
42Alloy
wavelength (nm)
930
6
Maximum light emitting
wavelength (nm)
Lead frame plating
wavelength (nm)
SnCu plating
700 to 1 200
950
Sensitivity
1.6mm or more
I/O Frequency (MHz)
Response time (μs)
Sheet No.: D3-A00601EN
GP1S094HCZ0F
0.3
20