GP1S51V Sharp Microelectronics, GP1S51V Datasheet - Page 2

• Manufacturer Part Number: GP1S51V
• Description: PHOTOINTERRUPTER SLOT 3.0MM PCB
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S51V

• Sensing Distance: 0.118" (3mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 3µs, 4µs
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 425-1048-5

*1 Pulse width<=100 s, Duty ratio= 0.01
*2 For 5 seconds
Transfer
charac-
teristics
Output
Absolute Maximum Ratings
Output
Electro-optical Characteristics
Input
Input
Internal connection diagram ( Common to 4 models )
1
2
Response time
Forward
voltage
*1
*2
Peak forward voltage
Reverse current
Collector dark current
Collector-emitter saturation voltage
Collector Current
Forward current
Peak forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Soldering temperature
Parameter
Parameter
GP1S50/ GP1S51V/ GP1S52V
Rise time
GP1S54
Fall time
4
3
1 Anode
2 Cathode
3 Collector
4 Emitter
Symbol
V
V
I
CE ( sat )
V
CEO
I
t
t
Ic
FM
R
R
F
F
Symbol
V
V
T
T
I
T
V
P
I
I
CEO
ECO
P
FM
opr
F
C
stg
sol
C
R
I
I
V
V
I
I
V
R
F
FM
F
F
CE
L =
R
CE
= 20mA
= 40mA, I
= 20mA, V
= 3V
= 0.5A
100
= 20V
= 2V, I
Conditions
- 40 to + 100
- 25 to + 85
Rating
CE
260
50
75
35
20
75
C
1
6
6
CE
= 0.5mA
GP1S50/GP1S51V/GP1S52V/GP1S54
= 2mA
= 5V
( Ta = 25˚C )
Unit
mW
mW
mA
mA
˚C
˚C
˚C
A
V
V
V
MIN.
0.5
-
-
-
-
-
-
-
-
TYP.
1.25
1.2
3
1
3
4
-
-
-
MAX.
100
1.4
1.4
0.4
10
15
20
( Ta = 25˚C )
4
5
Unit
mA
nA
V
V
V
A
s
s