GP1S51V Sharp Microelectronics, GP1S51V Datasheet - Page 3

• Manufacturer Part Number: GP1S51V
• Description: PHOTOINTERRUPTER SLOT 3.0MM PCB
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S51V

• Sensing Distance: 0.118" (3mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 3µs, 4µs
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 425-1048-5

Fig. 1 Forward Current vs. Ambient
Fig. 3 Peak Forward Current vs.
Fig. 5 Collector Current vs.
2000
1000
500
200
100
60
50
40
30
20
10
12
50
20
10
0
- 25
8
6
4
2
Temperature
Duty Ratio
Forward Current
0
5
0
10
- 2
10
0
Ambient temperature T
Forward current I
2
20
25
Duty ratio
5
Pulse width <=100 s
T
10
a
= 25˚C
50
30
- 1
F
( mA )
a
2
( ˚C )
V
T
CE
a
= 25˚C
75
40
= 5V
85
5
100
50
1
Fig. 2 Collector Power Dissipation vs.
Fig. 4 Forward Current vs.
Fig. 6 Collector Current vs.
120
100
500
200
100
80
75
60
40
20
50
20
10
- 25
7
6
5
4
3
2
1
0
0
Forward Voltage
5
2
1
Collector-emitter Voltage
Ambient Temperature
GP1S50/GP1S51V/GP1S52V/GP1S54
0
0
1
T
0.5
a
Collector-emitter voltage V
= 75˚C
2
0
Ambient temperature T
50˚C
Forward voltage V
1
3
25
4
1.5
I
F
= 50mA
5
40mA
30mA
20mA
10mA
2
50
6
F
a
- 25˚C
( V )
2.5
( ˚C )
7
25˚C
CE
0˚C
T
( V )
75
a
8
= 25˚C
3
85
9
3.5
100
10