GP1S51V Sharp Microelectronics, GP1S51V Datasheet - Page 4

• Manufacturer Part Number: GP1S51V
• Description: PHOTOINTERRUPTER SLOT 3.0MM PCB
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S51V

• Sensing Distance: 0.118" (3mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 3µs, 4µs
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 425-1048-5

Fig. 7 Collector Current vs.
Fig. 9 Response Time vs.
Fig.10 Frequency Response
- 10
- 15
- 20
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.5
0.2
0.1
- 5
50
20
10
0.01
0
- 25
5
2
1
0
Load Resistance
Ambient Temperature
2
0.02 0.05 0.1 0.2
V
I
T
C
5
CE
a
= 2mA
= 25˚C
= 2V
10
0
3
Ambient temperature T
2
Load resistance R
t
t
d
s
Frequency f ( Hz )
25
t
5
f
t
r
10
4
2
0.5
50
R
10k
L
L
=
5
( k
1
a
I
V
10
( ˚C )
F
1k
CE
= 20mA
5
)
V
I
T
2
75
C
= 5V
CE
a
= 2mA
2
= 25˚C
= 2V
100
5
5
100
10
10
6
Input
R
D
Fig. 8 Collector-emitter Saturation Voltage vs.
Test Circuit for Response Time
Fig.11 Collector Dark Current vs.
10
10
10
10
10
0.25
0.15
0.05
0.2
0.1
- 6
- 7
- 8
- 9
- 10
- 25
0
5
2
5
2
5
2
5
2
- 25
Ambient Temperature
GP1S50/GP1S51V/GP1S52V/GP1S54
Ambient Temperature
V
CC
R
L
V
CE
Output
= 20V
0
0
Ambient temperature T
Ambient temperature T
Output
25
25
Input
t
d
t
r
50
50
a
a
I
I
( ˚C )
F
C
t
( ˚C )
s
= 40mA
= 0.5mA
75
75
t
f
100
100
10%
90%