CMF20120D Cree Inc, CMF20120D Datasheet - Page 10

• Manufacturer Part Number: CMF20120D
• Description: SIC MOSFET N-CH 1200V TO-247-3
• Manufacturer: Cree Inc
• Series: SiC MOSFETr

Specifications of CMF20120D

• Mfg Application Notes: SiC MOSFETs Application Considerations
• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 90.8nC @ 20V
• Input Capacitance (ciss) @ Vds: 1915pF @ 800V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 1200V
• On Resistance Rds(on): 0.08ohm
• Rds(on) Test Voltage Vgs: 20V
• Configuration: Single
• Resistance Drain-source Rds (on): 80 mOhms
• Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 150 W
• Mounting Style: Through Hole
• Gate Charge Qg: 90.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance
10
Fig 7. Inductive Switching Energy(Turn-on) vs. T
Fig 9. Typical Gate Charge Characteristics @ 25°C
25
25
20
20
15
15
10
10
-5
5
5
0
CMF20120D Rev. A
600
600
500
500
400
400
300
300
200
100
0
0
0
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
20
25
1.E-06
Turn-on Loss
Turn-on Loss
50
Gate Charge (nC)
40
Temp ( C)
75
1.E-05
Fig 6. Transient Thermal Impedence, Junction - Case
60
100
V
R
V
V
I
I
GS
G
DD
D
D
DD
=
=
=20A
80
= -2/20V
=
=800V
11.8Ω Total
20A
1.E-04
800V
125
100
150
1.E-03
Time (s)
1.E-02
Fig 8. Inductive Switching Energy(Turn-off) vs. T
25
20
15
10
5
0
600
600
500
500
400
400
300
300
200
100
0
Fig 10. Typical Avalanche Waveform
0
0
1.E-01
0.001
25
0.002
Turn-off Loss
Turn-off Loss
1.E+00
50
I
DS
Time (s)
0.003
Temp ( C)
E
AS
75
= 2.20 J
0.004
1.E+01
100
V
R
V
I
GS
G
DD
D
0.005
=
=
= -2/20V
=
11.8Ω Total
20A
800V
125
V
DS
0.006
2500
2000
1500
1000
500
0
150