CMF20120D Cree Inc, CMF20120D Datasheet - Page 11

• Manufacturer Part Number: CMF20120D
• Description: SIC MOSFET N-CH 1200V TO-247-3
• Manufacturer: Cree Inc
• Series: SiC MOSFETr

Specifications of CMF20120D

• Mfg Application Notes: SiC MOSFETs Application Considerations
• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 90.8nC @ 20V
• Input Capacitance (ciss) @ Vds: 1915pF @ 800V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 1200V
• On Resistance Rds(on): 0.08ohm
• Rds(on) Test Voltage Vgs: 20V
• Configuration: Single
• Resistance Drain-source Rds (on): 80 mOhms
• Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 150 W
• Mounting Style: Through Hole
• Gate Charge Qg: 90.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Clamped Inductive Switch Testing Fixture
11
+
-
Fig 11. Switching Waveform Test Circuit
800V
Vpk
Fig 13. Body Diode Recovery Waveform
Ic
Diode Reverse
Recovery Energy
CMF20120D Rev. A
tx
10% V cc
Irr
42.3μf
t1
t rr
856μH
t2
Diode Recovery
Waveforms
10% Irr
Erec=
Qrr=
∫
CMF20120D
t1
id dt
t2
D.U.T.
∫
V cc
tx
id dt
trr
C2D10120D
10A, 1200V
SiC Schottky
+
Output (i D )
Input (V i )
-
800V
i D(on)
i D(off)
V GS(on)
V GS(off)
10%
Fig 14. Body Diode Recovery Test
50%
Fig 12. Switching Test Waveform Times
42.3μf
t d(on)i
90%
t on(i)
Input Pulse
Rise Time
10%
t fi
pulse duration
t w
90%
856μH
CMF20120D
90%
t d(off)i
50%
90%
10%
Input Pulse
Fall Time
t off(i)
CMF20120D
D.U.T.
t ri
10%