CMF20120D Cree Inc, CMF20120D Datasheet - Page 9

• Manufacturer Part Number: CMF20120D
• Description: SIC MOSFET N-CH 1200V TO-247-3
• Manufacturer: Cree Inc
• Series: SiC MOSFETr

Specifications of CMF20120D

• Mfg Application Notes: SiC MOSFETs Application Considerations
• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 90.8nC @ 20V
• Input Capacitance (ciss) @ Vds: 1915pF @ 800V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 1200V
• On Resistance Rds(on): 0.08ohm
• Rds(on) Test Voltage Vgs: 20V
• Configuration: Single
• Resistance Drain-source Rds (on): 80 mOhms
• Forward Transconductance Gfs (max / Min): 7.3 S, 6.8 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 150 W
• Mounting Style: Through Hole
• Gate Charge Qg: 90.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance
9
Fig 1. Typical Output Characteristics T
60
50
40
30
20
20
10
120
100
1.0E-08
1.0E-09
1.0E-10
1.0E-11
0
80
60
40
40
20
Figure 3. Typical Transfer Characteristics
0
0
0
CMF20120D Rev. A
0
2
2
20
4
4
40
6
6
T = 125
60
8
8
80
Fig 5A and 5B. Typical Capacitance vs. Drain – Source Voltage
V
DS
10
°
V
(V)
C
GS
V
10
DS
(V)
C
C
C
100
oss
rss
iss
(V)
12
12
120
T = 25
14
14
140
16
J
°
V
GS
= 25ºC
C
=10V
16
160
18
18
180
20
V
f = 1 MHz
GS
= 0 V
200
20
1.0E-08
1.0E-09
1.0E-10
1.0E-11
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics T
0
120
100
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
80
60
40
40
20
2
1
0
0
0
0
100
2
25
200
4
6
300
50
8
V
DS
400
C
C
C
V
T (
iss
rss
oss
(V)
DS
75
10
o
(V)
C)
V
GS
=20V
500
12
100
14
600
16
J
125
= 125ºC
700
V
f = 1 MHz
18
GS
= 0 V
800
150
20