STP8N65M5 STMicroelectronics, STP8N65M5 Datasheet - Page 4
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STP8N65M5
Manufacturer Part Number
STP8N65M5
Description
MOSFET N-CH 650V 7A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP8N65M5.pdf
(20 pages)
Specifications of STP8N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 100V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 Formed Leads
Transistor Polarity
N Channel
Continuous Drain Current Id
7A
Drain Source Voltage Vds
710V
On Resistance Rds(on)
0.56ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Power
RoHS Compliant
Configuration
Single
Resistance Drain-source Rds (on)
0.56 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
7 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10885-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
2
4/20
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
C
V
R
(BR)DSS
to 80% V
to 80% V
C
o(er)
I
I
C
C
o(tr)
GS(th)
Q
Q
= 25 °C unless otherwise specified)
DS(on
R
DSS
GSS
Q
o(er)
o(tr)
oss
rss
iss
gs
gd
G
g
(2)
(1)
is a constant capacitance value that gives the same charging time as C
is a constant capacitance value that gives the same stored energy as C
DSS
DSS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance energy
related
Equivalent output
capacitance time
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 16531 Rev 2
V
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
GS
GS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
= Max rating
= Max rating, T
= 100 V, f = 1 MHz,
= 0
= 0, V
= 0, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 520 V, I
Figure
Test conditions
Test conditions
GS
DS
DS
, I
19)
GS
D
D
= 0 to 520 V
= 0 to 520 V
D
= 250 µA
= 3.5 A
= 0
= 3.5 A,
C
=125 °C
Min.
Min.
oss
650
oss
3
-
-
-
-
-
while V
while V
STD/F/I/P/U8N65M5
Typ.
Typ.
0.56
690
2.4
3.6
18
17
52
15
DS
DS
2
6
4
is rising from 0
is rising from 0
Max.
Max.
100
100
0.6
1
5
-
-
-
-
-
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
pF
V
V
Ω
Ω