STP8N65M5 STMicroelectronics, STP8N65M5 Datasheet - Page 6
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STP8N65M5
Manufacturer Part Number
STP8N65M5
Description
MOSFET N-CH 650V 7A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP8N65M5.pdf
(20 pages)
Specifications of STP8N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 100V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 Formed Leads
Transistor Polarity
N Channel
Continuous Drain Current Id
7A
Drain Source Voltage Vds
710V
On Resistance Rds(on)
0.56ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Power
RoHS Compliant
Configuration
Single
Resistance Drain-source Rds (on)
0.56 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
7 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10885-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
2.1
6/20
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
I²PAK, D²PAK
Safe operating area for DPAK, IPAK Figure 5.
Safe operating area for TO-220FP
1
1
1
10
10
10
Tj=150°C
Tc=25°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 16531 Rev 2
100µs
100µs
100µs
1ms
1ms
1ms
10µs
10ms
10µs
10ms
10µs
10ms
AM08194v1
AM08195v1
AM08196v1
Figure 3.
Figure 7.
Thermal impedance for TO-220,
I²PAK, D²PAK
Thermal impedance for DPAK, IPAK
Thermal impedance for TO-220FP
STD/F/I/P/U8N65M5