BF1101WR,135 NXP Semiconductors, BF1101WR,135 Datasheet - Page 6

• Manufacturer Part Number: BF1101WR,135
• Description: MOSFET N-CH 7V DUAL SOT343
• Manufacturer: NXP Semiconductors

Specifications of BF1101WR,135

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 7V
• Current Rating: 30mA
• Noise Figure: 1.7dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 16 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1999 May 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
V
T
Fig.11 Drain current as a function of gate 1 (= V
Fig.9
V
R
DS
G2-S
j
G2-S
(mA)
= 25 C.
(mA)
G1
I D
I D
= 5 V.
connected to V
20
16
12
20
16
12
= 4 V.
= 4 V; T
8
4
0
8
4
0
0
0
and drain supply voltage; typical values.
Drain current as a function of gate 1 current;
typical values.
j
= 25 C.
10
GG
2
R G1 = 47 kΩ 68 kΩ
; see Fig.21.
20
4
30
V GG = V DS (V)
6
40
I G1 (μA)
82 kΩ
MGS303
MGS305
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
50
8
GG
)
6
handbook, halfpage
handbook, halfpage
V
R
Fig.12 Drain current as a function of gate 2 voltage;
V
R
DS
G1
DS
G1
(mA)
(mA)
I D
Fig.10 Drain current as a function of gate 1
= 5 V; T
= 120 k (connected to V
I D
= 5 V; V
= 120 k (connected to V
16
12
15
10
8
4
0
5
0
BF1101; BF1101R; BF1101WR
0
0
typical values.
j
G2-S
= 25 C.
supply voltage (= V
= 4 V; T
1
j
2
= 25 C.
2
GG
GG
); see Fig.21.
); see Fig.21.
3
GG
4
); typical values.
Product specification
V GG = 5 V
V G2-S (V)
4
V GG (V)
4.5 V
4 V
3.5 V
3 V
MGS304
MGS306
6
5