BF1101WR,135 NXP Semiconductors, BF1101WR,135 Datasheet - Page 8

• Manufacturer Part Number: BF1101WR,135
• Description: MOSFET N-CH 7V DUAL SOT343
• Manufacturer: NXP Semiconductors

Specifications of BF1101WR,135

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 7V
• Current Rating: 30mA
• Noise Figure: 1.7dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 16 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1999 May 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
I
V
I
D
Fig.17 Input admittance as a function of frequency;
D
DS
DS
Fig.19 Forward transfer admittance and phase as
= 12 mA; T
= 12 mA; T
(mS)
(mS)
|y fs |
y is
10
= 5 V; V
= 5 V; V
10
10
10
10
−1
1
2
1
2
10
10
typical values.
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
g is
b is
|y fs |
ϕ fs
f (MHz)
f (MHz)
MGS311
MGS313
10
10
3
3
−10
−10
−1
(deg)
ϕ fs
2
8
handbook, halfpage
handbook, halfpage
V
I
D
V
I
D
DS
Fig.18 Reverse transfer admittance and phase as
DS
= 12 mA; T
(mS)
(mS)
|y rs |
= 12 mA; T
y os
10
= 5 V; V
10
= 5 V; V
10
10
−1
Fig.20 Output admittance as a function of
1
BF1101; BF1101R; BF1101WR
1
2
10
10
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
frequency; typical values.
= 25 C.
= 25 C.
10
10
2
2
|y rs |
g os
b os
ϕ rs
f (MHz)
f (MHz)
Product specification
MGS314
MGS312
10
10
3
−10
−10
−1
3
(deg)
ϕ rs
2