BLF7G20LS-200,112 NXP Semiconductors, BLF7G20LS-200,112 Datasheet - Page 13

• Manufacturer Part Number: BLF7G20LS-200,112
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 50.6A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 55W
• Resistance Drain-source Rds (on): 0.093 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Ruggedness in class-AB operation . . . . . . . . . 3
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
BLF7G20L-200; BLF7G20LS-200
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Document identifier: BLF7G20L-200_7G20LS-200
Power LDMOS transistor
Date of release: 1 March 2011
All rights reserved.