BLF7G20LS-200,112 NXP Semiconductors, BLF7G20LS-200,112 Datasheet - Page 3

• Manufacturer Part Number: BLF7G20LS-200,112
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 50.6A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 55W
• Resistance Drain-source Rds (on): 0.093 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
6. Characteristics
7. Test information
BLF7G20L-200_7G20LS-200
Preliminary data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF7G20L-200 and BLF7G20LS-200 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol Parameter
V
V
I
I
I
Symbol
P
G
g
R
RL

ACPR
DSS
DSX
GSS
j
DS
fs
D
(BR)DSS
GS(th)
L(AV)
DS(on)
p
= 25
in
= 30 V; I

C unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Dq
= 1620 mA; P
All information provided in this document is subject to legal disclaimers.
DS
1
BLF7G20L-200; BLF7G20LS-200
= 1807.5 MHz; f
= 28 V; I
Rev. 3 — 1 March 2011
Dq
L
= 185 W (CW); f = 1805 MHz to 1880 MHz.
= 1620 mA; T
2
= 1812.5 MHz; f
Conditions
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 5.25 A
case
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
GS(th)
GS(th)
= 25
= 55 W
= 55 W
= 55 W
= 55 W
D
DS
D
D
3
= 1.5 mA
+ 3.75 V;
DS
+ 3.75 V;

= 1872.5 MHz; f
= 150 mA
C; unless otherwise specified; in a
= 7.5 A
= 28 V
= 0 V
Min
-
17
-
30
-
Power LDMOS transistor
Min
65
1.5
-
42
420 2.44
-
-
4
Typ
55
18
-
33
29
= 1877.5 MHz;
© NXP B.V. 2011. All rights reserved.
Typ
-
1.9
-
50.6
18.6
0.093 -
Max
-
-
10
-
-
Max
-
2.3
4.2
-
420
-
W
Unit
dB
dB
%
dBc
3 of 13
Unit
V
V
A
A
nA
S
