BLF7G20LS-200,112 NXP Semiconductors, BLF7G20LS-200,112 Datasheet - Page 7

TRANSISTOR PWR LDMOS SOT502

BLF7G20LS-200,112

Manufacturer Part Number
BLF7G20LS-200,112
Description
TRANSISTOR PWR LDMOS SOT502
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G20LS-200,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1.81GHz ~ 1.88GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
50.6A
Current - Test
1.62A
Voltage - Test
28V
Power - Output
55W
Resistance Drain-source Rds (on)
0.093 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
BLF7G20L-200_7G20LS-200
Preliminary data sheet
Fig 10. Component layout
C2
C8
See
Table 8
7.5 Test circuit
+
+
for list of components. The drawing is not to scale.
R1
R2
Table 8.
See
Component
C1, C9, C11, C16
C4, C6
C5
C12, C14
C13
C2, C8, C10, C15
R1, R2
50 mm
C1
C9
Figure 10
C6
C4
List of components
for component layout.
All information provided in this document is subject to legal disclaimers.
C5
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
BLF7G20L-200; BLF7G20LS-200
Rev. 3 — 1 March 2011
Value
10 F
68 pF
2.0 pF
100 pF
3.3 pF
470 F; 63 V
10 
C13
C10
C12
C14
C15
50 mm
Power LDMOS transistor
+
+
Remarks
TDK
ATC800B
ATC800B
ATC800B
ATC800B
Philips 0603
© NXP B.V. 2011. All rights reserved.
014aab198
C16
C11
7 of 13

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