BLF7G20LS-200,112 NXP Semiconductors, BLF7G20LS-200,112 Datasheet - Page 4

• Manufacturer Part Number: BLF7G20LS-200,112
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 50.6A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 55W
• Resistance Drain-source Rds (on): 0.093 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
BLF7G20L-200_7G20LS-200
Preliminary data sheet
Fig 1.
(dB)
G
(1) f = 1805 MHz
(2) f = 1845 MHz
(3) f = 1880 MHz
19.0
18.5
18.0
17.5
17.0
p
0
V
Power gain as a function of average output
power; typical values
DS
= 28 V; I
40
7.2 1 Tone CW
Dq
= 1620 mA.
80
120
(3)
(2)
(1)
160
All information provided in this document is subject to legal disclaimers.
P
014aab189
L(AV)
BLF7G20L-200; BLF7G20LS-200
(W)
200
Rev. 3 — 1 March 2011
Fig 2.
(%)
η
(1) f = 1805 MHz
(2) f = 1845 MHz
(3) f = 1880 MHz
D
60
40
20
0
0
V
Drain efficiency as a function of average
output power; typical values
DS
= 28 V; I
40
Dq
= 1620 mA.
80
Power LDMOS transistor
120
(1)
(2)
(3)
160
© NXP B.V. 2011. All rights reserved.
P
014aab190
L(AV)
(W)
200
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