BLF7G20LS-200,112 NXP Semiconductors, BLF7G20LS-200,112 Datasheet - Page 2

• Manufacturer Part Number: BLF7G20LS-200,112
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 50.6A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 55W
• Resistance Drain-source Rds (on): 0.093 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF7G20L-200_7G20LS-200
Preliminary data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
BLF7G20L-200 (SOT502A)
1
2
3
BLF7G20LS-200 (SOT502B)
1
2
3
Type number
Symbol
V
T
Symbol
R
BLF7G20L-200
BLF7G20LS-200
V
T
stg
j
DS
GS
th(j-c)
Connected to flange
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
BLF7G20L-200; BLF7G20LS-200
Rev. 3 — 1 March 2011
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
Simplified outline
Conditions
T
V
case
DS
= 28 V; I
= 80 C; P
1
2
1
2
Dq
3
Power LDMOS transistor
= 1620 mA
L
3
= 55 W;
Graphic symbol
-
Min
-
0.5
65
© NXP B.V. 2011. All rights reserved.
2
2
Max
65
+13
+150
225
sym112
sym112
Typ
0.27 K/W
Version
SOT502A
SOT502B
1
3
1
3
2 of 13
Unit
Unit
V
V
C
C