BLL6H1214L-250,112 NXP Semiconductors, BLL6H1214L-250,112 Datasheet - Page 10

• Manufacturer Part Number: BLL6H1214L-250,112
• Description: TRANS L-BAND RADAR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214L-250,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 17dB
• Voltage - Rated: 100V
• Current Rating: 42A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 250W
• Resistance Drain-source Rds (on): 100 mOhms
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 42 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 11.
BLL6H1214L-250_1214LS-250
Product data sheet
Document ID
BLL6H1214L-250_1214LS-250 v.3
Modifications:
BLL6H1214L-250_1214LS-250_2
BLL6H1214L-250_1214LS-250_1
Revision history
Table 10.
Acronym
LDMOS
LDMOST
RF
SMD
VSWR
Abbreviations
Release
date
20100714 Product data
20100302 Objective data
20091211 Objective data
•
Table 7 on page
All information provided in this document is subject to legal disclaimers.
Description
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Data sheet status Change notice
sheet
sheet
sheet
Rev. 3 — 14 July 2010
3: the minimum value of 
-
-
-
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
D
has been changed.
Supersedes
BLL6H1214L-250_1214LS-250_2
BLL6H1214L-250_1214LS-250_1
-
© NXP B.V. 2010. All rights reserved.
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