BLL6H1214L-250 NXP Semiconductors, BLL6H1214L-250 Datasheet

LDMOS,RF,250W,1200M-1400MHZ,50V

BLL6H1214L-250

Manufacturer Part Number
BLL6H1214L-250
Description
LDMOS,RF,250W,1200M-1400MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLL6H1214L-250

Drain Source Voltage Vds
100V
Continuous Drain Current Id
42A
Operating Frequency Range
960MHz To 1.2GHz
Rf Transistor Case
SOT-502A
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLL6H1214L-250
Manufacturer:
NXP
Quantity:
5 000
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Typical RF performance at T
production test circuit.
Mode of operation
pulsed RF
BLL6H1214L-250;
BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 3 — 14 July 2010
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an I
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Output power = 250 W
Power gain = 17 dB
Efficiency = 55 %
Test information
Dq
of 100 mA, a t
f
(GHz)
1.2 to 1.4
case
= 25
p
of 300 s with  of 10 %:
C; t
V
(V)
50
DS
p
= 300
P
(W)
250
L
s;
= 10 %; I
G
(dB)
17
Dq
p
= 100 mA; in a class-AB
(%)
55
D
Product data sheet
t
(ns)
15
r
t
(ns)
5
f

Related parts for BLL6H1214L-250

BLL6H1214L-250 Summary of contents

Page 1

... BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 3 — 14 July 2010 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...

Page 2

... NXP Semiconductors 1.3 Applications  L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pin BLL6H1214L-250 (SOT502A BLL6H1214LS-250 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLL6H1214L-250 BLL6H1214LS-250 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 3

... L(1dB)  droop(pulse BLL6H1214L-250_1214LS-250 Product data sheet Thermal characteristics Parameter transient thermal impedance from junction to case DC characteristics C. drain-source breakdown voltage V gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance V RF characteristics  ...

Page 4

... NXP Semiconductors 6.1 Ruggedness in class-AB operation The BLL6H1214L-250 and BLL6H1214LS-250 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions Application information 7.1 Impedance information Table 8. Typical values unless otherwise specified. f GHz 1.2 1.3 1.4 Fig 1. BLL6H1214L-250_1214LS-250 Product data sheet = 50 V ...

Page 5

... ( 1200 MHz ( 1300 MHz ( 1400 MHz Fig 2. Output power as a function of input power; typical values BLL6H1214L-250_1214LS-250 Product data sheet 001aal165 (dB ( 100 mA 1200 MHz ( 1300 MHz ( 1400 MHz Fig 3. All information provided in this document is subject to legal disclaimers. ...

Page 6

... ( 1200 MHz ( 1300 MHz ( 1400 MHz Fig 4. Drain efficiency as a function of load power; typical values P = 250 Fig 6. Input return loss as a function of frequency; typical value BLL6H1214L-250_1214LS-250 Product data sheet 001aal167 (1) (3) (2) 250 300 350 P ( 100 mA. Dq Fig (dB) ...

Page 7

... C6 C10 R1 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 800B or capacitor of same quality. BLL6H1214L-250_1214LS-250 Product data sheet See Table 9 for list of components. Component layout for class-AB application circuit List of components 7 ...

Page 8

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 0.15 20.02 mm 3.43 12.57 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 8. Package outline SOT502A BLL6H1214L-250_1214LS-250 Product data sheet scale 19.96 9.50 9.53 1.14 19.94 5.33 19 ...

Page 9

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 0.15 20.02 mm 3.43 12.57 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 9. Package outline SOT502B BLL6H1214L-250_1214LS-250 Product data sheet scale 19.96 9.50 9.53 1.14 19.94 5 ...

Page 10

... Abbreviations Table 10. Acronym LDMOS LDMOST RF SMD VSWR 10. Revision history Table 11. Revision history Document ID BLL6H1214L-250_1214LS-250 v.3 Modifications: BLL6H1214L-250_1214LS-250_2 BLL6H1214L-250_1214LS-250_1 BLL6H1214L-250_1214LS-250 Product data sheet Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio ...

Page 11

... Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BLL6H1214L-250_1214LS-250 Product data sheet [3] Definition This document contains data from the objective specification for product development. ...

Page 12

... Contact information For more information, please visit: For sales office addresses, please send an email to: BLL6H1214L-250_1214LS-250 Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLL6H1214L-250_1214LS-250 All rights reserved. Date of release: 14 July 2010 ...

Related keywords