BLL6H1214L-250 NXP Semiconductors, BLL6H1214L-250 Datasheet - Page 6

• Manufacturer Part Number: BLL6H1214L-250
• Description: LDMOS,RF,250W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214L-250

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 42A
• Operating Frequency Range: 960MHz To 1.2GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLL6H1214L-250_1214LS-250
Product data sheet
Fig 4.
Fig 6.
(%)
η
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
D
70
60
50
40
30
20
10
0
0
V
Drain efficiency as a function of load power;
typical values
P
Input return loss as a function of frequency; typical value
DS
L
= 250 W; V
= 50 V; t
50
100
p
DS
= 300 s;  = 10 %; I
= 50 V; t
150
200
p
= 300 s;  = 10 %; I
(1)
(3)
(2)
RL
(dB)
250
in
20
16
12
8
4
0
1175
Dq
All information provided in this document is subject to legal disclaimers.
300
001aal167
= 100 mA.
P
L
1225
(W)
350
Rev. 3 — 14 July 2010
Dq
= 100 mA.
1275
Fig 5.
1325
(dB)
G
p
20
18
16
14
12
10
1175
1375
P
I
Power gain and drain efficiency as function of
frequency; typical values
Dq
L
001aal169
= 250 W; V
f (MHz)
= 100 mA.
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
1225
1425
DS
η
G
D
1275
p
= 50 V; t
1325
p
= 300 s;  = 10 %;
1375
© NXP B.V. 2010. All rights reserved.
001aal168
f (MHz)
1425
60
50
40
30
20
10
(%)
η
D
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